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Results: 1-20 |
Results: 20
High density plasma via hole etching in SiC
Authors: Cho, H Lee, KP Leerungnawarat, P Chu, SNG Ren, F Pearton, SJ Zetterling, CM
Citation: H. Cho et al., High density plasma via hole etching in SiC, J VAC SCI A, 19(4), 2001, pp. 1878-1881
Special issue on III-V nitrides and silicon carbide - Foreword
Authors: Adesida, I Redwing, J Rea, L Zetterling, CM
Citation: I. Adesida et al., Special issue on III-V nitrides and silicon carbide - Foreword, J ELEC MAT, 30(3), 2001, pp. 109-109
Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide
Authors: Lee, SK Zetterling, CM Ostling, M
Citation: Sk. Lee et al., Schottky barrier height dependence on the metal work function for p-type 4H-silicon carbide, J ELEC MAT, 30(3), 2001, pp. 242-246
Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization
Authors: Danielsson, E Lee, SK Zetterling, CM Ostling, M
Citation: E. Danielsson et al., Inductively coupled plasma etch damage in 4H-SiC investigated by Schottky diode characterization, J ELEC MAT, 30(3), 2001, pp. 247-252
Fabrication and characterization of heterojunction diodes with HVPE-Grown GaN on 4H-SiC
Authors: Danielsson, E Zetterling, CM Ostling, M Nikolaev, A Nikitina, IP Dmitriev, V
Citation: E. Danielsson et al., Fabrication and characterization of heterojunction diodes with HVPE-Grown GaN on 4H-SiC, IEEE DEVICE, 48(3), 2001, pp. 444-449
Effect of UV light irradiation on SiC dry etch rates
Authors: Leerungnawarat, P Cho, H Pearton, SJ Zetterling, CM Ostling, M
Citation: P. Leerungnawarat et al., Effect of UV light irradiation on SiC dry etch rates, J ELEC MAT, 29(3), 2000, pp. 342-346
CVD-based tungsten carbide Schottky contacts to 6H-SiC for very high-temperature operation
Authors: Lundberg, N Ostling, M Zetterling, CM Tagtstrom, P Jansson, U
Citation: N. Lundberg et al., CVD-based tungsten carbide Schottky contacts to 6H-SiC for very high-temperature operation, J ELEC MAT, 29(3), 2000, pp. 372-375
Structural and electrical characteristics of oxygen-implanted 6H-SiC
Authors: Wang, LW Huang, JP Duo, XZ Song, ZT Lin, CL Zetterling, CM Ostling, M
Citation: Lw. Wang et al., Structural and electrical characteristics of oxygen-implanted 6H-SiC, NUCL INST B, 169, 2000, pp. 1-5
Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide
Authors: Lee, SK Zetterling, CM Ostling, M Palmquist, JP Hogberg, H Jansson, U
Citation: Sk. Lee et al., Low resistivity ohmic titanium carbide contacts to n- and p-type 4H-silicon carbide, SOL ST ELEC, 44(7), 2000, pp. 1179-1186
Investigation of damage behaviour and isolation effect of n-type 6H-SiC byimplantation of oxygen
Authors: Wang, LW Huang, JP Duo, XZ Song, ZT Lin, CL Zetterling, CM Ostling, M
Citation: Lw. Wang et al., Investigation of damage behaviour and isolation effect of n-type 6H-SiC byimplantation of oxygen, J PHYS D, 33(12), 2000, pp. 1551-1555
Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide
Authors: Lee, SK Zetterling, CM Ostling, M
Citation: Sk. Lee et al., Schottky diode formation and characterization of titanium tungsten to n- and p-type 4H silicon carbide, J APPL PHYS, 87(11), 2000, pp. 8039-8044
Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H-silicon carbide
Authors: Lee, SK Zetterling, CM Danielsson, E Ostling, M Palmquist, JP Hogberg, H Jansson, U
Citation: Sk. Lee et al., Electrical characterization of TiC ohmic contacts to aluminum ion implanted 4H-silicon carbide, APPL PHYS L, 77(10), 2000, pp. 1478-1480
Ultradeep, low-damage dry etching of SiC
Authors: Cho, H Leerungnawarat, P Hays, DC Pearton, SJ Chu, SNG Strong, RM Zetterling, CM Ostling, M Ren, F
Citation: H. Cho et al., Ultradeep, low-damage dry etching of SiC, APPL PHYS L, 76(6), 2000, pp. 739-741
UV-ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide
Authors: Zetterling, CM Ostling, M Harris, CI Wood, PC Wong, SS
Citation: Cm. Zetterling et al., UV-ozone precleaning and forming gas annealing applied to wet thermal oxidation of p-type silicon carbide, MAT SC S PR, 2(1), 1999, pp. 23-27
Via-hole etching for SiC
Authors: Leerungnawarat, P Hays, DC Cho, H Pearton, SJ Strong, RM Zetterling, CM Ostling, M
Citation: P. Leerungnawarat et al., Via-hole etching for SiC, J VAC SCI B, 17(5), 1999, pp. 2050-2054
Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes
Authors: Danielsson, E Zetterling, CM Ostling, M Breitholtz, B Linthicum, K Thomson, DB Nam, OH Davis, RF
Citation: E. Danielsson et al., Simulation and electrical characterization of GaN/SiC and AlGaN/SiC heterodiodes, MAT SCI E B, 61-2, 1999, pp. 320-324
Plasma chemistries for high density plasma etching of SiC
Authors: Hong, J Shul, RJ Zhang, L Lester, LF Cho, H Hahn, YB Hays, DC Jung, KB Pearton, SJ Zetterling, CM Ostling, M
Citation: J. Hong et al., Plasma chemistries for high density plasma etching of SiC, J ELEC MAT, 28(3), 1999, pp. 196-201
Simulation study of on-state losses as function of carrier life-time for aGaN/SiC high power HBT design
Authors: Danielsson, E Breitholtz, B Zetterling, CM Ostling, M
Citation: E. Danielsson et al., Simulation study of on-state losses as function of carrier life-time for aGaN/SiC high power HBT design, PHYS SCR, T79, 1999, pp. 290-293
A study of optical characteristics of damage in oxygen-implanted 6H-SiC
Authors: Wang, LW Huang, JP Lin, CL Zou, SC Zheng, YX Wang, XJ Huang, DM Zetterling, CM Ostling, M
Citation: Lw. Wang et al., A study of optical characteristics of damage in oxygen-implanted 6H-SiC, J MAT SCI L, 18(12), 1999, pp. 979-982
ICP etching of SiC
Authors: Wang, JJ Lambers, ES Pearton, SJ Ostling, M Zetterling, CM Grow, JM Ren, F Shul, RJ
Citation: Jj. Wang et al., ICP etching of SiC, SOL ST ELEC, 42(12), 1998, pp. 2283-2288
Risultati: 1-20 |