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Results: 1-10 |
Results: 10
Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates
Authors: Davis, RF Gehrke, T Linthicum, KJ Zheleva, TS Rajagopal, P Zorman, CA Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth and characterization of thin films of gallium nitride and related materials on SiC(0001) and si(111) substrates, Z METALLKUN, 92(2), 2001, pp. 163-166
Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization
Authors: Davis, RF Gehrke, T Linthicum, KJ Zheleva, TS Preble, EA Rajagopal, P Zorman, CA Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth of thin films of gallium nitride and related materials and their characterization, J CRYST GR, 225(2-4), 2001, pp. 134-140
Lateral epitaxy and dislocation density reduction in selectively grown GaNstructures
Authors: Zheleva, TS Nam, OH Ashmawi, WM Griffin, JD Davis, RF
Citation: Ts. Zheleva et al., Lateral epitaxy and dislocation density reduction in selectively grown GaNstructures, J CRYST GR, 222(4), 2001, pp. 706-718
Deposition factors and band gap of zinc-blende AlN
Authors: Thompson, MP Auner, GW Zheleva, TS Jones, KA Simko, SJ Hilfiker, JN
Citation: Mp. Thompson et al., Deposition factors and band gap of zinc-blende AlN, J APPL PHYS, 89(6), 2001, pp. 3331-3336
Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates
Authors: Davis, RF Gehrke, T Linthicum, KJ Zheleva, TS Rajagopal, P Zorman, CA Mehregany, M
Citation: Rf. Davis et al., Pendeo-epitaxial growth and characterization of GaN and related materials on (6H-SiC(0001) and Si(111) substrates, MRS I J N S, 5, 2000, pp. NIL_46-NIL_57
The properties of annealed AlN films deposited by pulsed laser deposition
Authors: Jones, KA Derenge, MA Zheleva, TS Kirchner, KW Ervin, MH Wood, MC Vispute, RD Sharma, RP Venkatesan, T
Citation: Ka. Jones et al., The properties of annealed AlN films deposited by pulsed laser deposition, J ELEC MAT, 29(3), 2000, pp. 262-267
Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN
Authors: Hanser, AD Nam, OH Bremser, MD Thomson, DB Gehrke, T Zheleva, TS Davis, RF
Citation: Ad. Hanser et al., Growth, doping and characterization of epitaxial thin films and patterned structures of AlN, GaN, and AlxGa1-xN, DIAM RELAT, 8(2-5), 1999, pp. 288-294
Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films
Authors: Zheleva, TS Smith, SA Thomson, DB Linthicum, KJ Rajagopal, P Davis, RF
Citation: Ts. Zheleva et al., Pendeo-epitaxy: A new approach for lateral growth of gallium nitride films, J ELEC MAT, 28(4), 1999, pp. L5-L8
Pendeo-epitaxy versus lateral epitaxial overgrowth of GaN: A comparative study via finite element analysis
Authors: Zheleva, TS Ashmawi, WM Jones, KA
Citation: Ts. Zheleva et al., Pendeo-epitaxy versus lateral epitaxial overgrowth of GaN: A comparative study via finite element analysis, PHYS ST S-A, 176(1), 1999, pp. 545-551
Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures
Authors: Zheleva, TS Ashmawi, WM Nam, OH Davis, RF
Citation: Ts. Zheleva et al., Thermal mismatch stress relaxation via lateral epitaxy in selectively grown GaN structures, APPL PHYS L, 74(17), 1999, pp. 2492-2494
Risultati: 1-10 |