AAAAAA
Results: 51-75/80
Authors:
Yoon, SF
Lui, PY
Zheng, HQ
Citation: Sf. Yoon et al., Characterization of Si-doped Ga0.52In0.48P grown by solid source molecularbeam epitaxy using deep level transient spectroscopy, J CRYST GR, 209(4), 2000, pp. 653-660
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Zhang, PH
Citation: Sf. Yoon et al., Effect of V/III ratio and temperature dependence of carrier concentration in partially ordered and disordered Ga0.52In0.48P grown on GaAs substrates, J CRYST GR, 208(1-4), 2000, pp. 197-204
Authors:
Zheng, HQ
Radahakrishnan, K
Yoon, SF
Ng, GI
Citation: Hq. Zheng et al., Electrical and optical properties of Si-doped InP grown by solid source molecular beam epitaxy using a valved phosphorus cracker cell, J APPL PHYS, 87(11), 2000, pp. 7988-7993
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Citation: Sf. Yoon et al., In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular-beam epitaxy using a valved phosphorus cracker cell, INT J ELECT, 87(3), 2000, pp. 257-267
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Kam, HT
Degenhardt, J
Citation: Sf. Yoon et al., Fabrication of strained and double heterojunction InxGa1-xP/In0.2Ga0.8As high electron mobility transistors grown by solid-source molecular beam epitaxy, IEEE DEVICE, 47(5), 2000, pp. 1115-1117
Authors:
Zheng, HQ
Radhakrishnan, K
Wang, H
Yuan, KH
Yoon, SF
Ng, GI
Citation: Hq. Zheng et al., Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy, APPL PHYS L, 77(6), 2000, pp. 869-871
Authors:
Yoon, SF
Zheng, HQ
Zhang, PH
Man, KW
Ng, GI
Citation: Sf. Yoon et al., Molecular beam epitaxial growth of InP using a valved phosphorus cracker cell: Optimization of electrical, optical and surface morphology characteristics, JPN J A P 1, 38(2B), 1999, pp. 981-984
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Citation: Sf. Yoon et al., Effects of V/III ratio on the properties of In1-xGaxP/GaAs grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy, JPN J A P 1, 38(10), 1999, pp. 5740-5744
Authors:
Yoon, SF
Mah, KW
Zheng, HQ
Citation: Sf. Yoon et al., Solid source molecular beam epitaxial growth of In0.48Ga0.52P on GaAs substrates using a valved phosphorus cracker cell, EPJ-APPL PH, 7(2), 1999, pp. 111-117
Authors:
Li, XP
Nee, AYC
Wong, YS
Zheng, HQ
Citation: Xp. Li et al., Theoretical modelling and simulation of milling forces, J MATER PR, 90, 1999, pp. 266-272
Authors:
Yoon, SF
Zhang, PH
Zheng, HQ
Citation: Sf. Yoon et al., Electrical and optical characteristics of molecular beam epitaxial Be-doped In0.53Ga0.26Al0.21As layers grown lattice-matched on InP (100) substrates, MAT SCI E B, 60(3), 1999, pp. 179-184
Authors:
Zheng, HQ
Li, XP
Wong, YS
Nee, AYC
Citation: Hq. Zheng et al., Theoretical modelling and simulation of cutting forces in face milling with cutter runout, INT J MACH, 39(12), 1999, pp. 2003-2018
Authors:
Liu, W
Zhang, B
Zheng, HQ
Citation: W. Liu et al., On the long distance contribution to the B-s -> gamma gamma decay in the effective Lagrangian approach, PHYS LETT B, 461(3), 1999, pp. 295-298
Molecular beam epitaxial growth of In1-x-yGaxAlyAs: effects of substrate temperature and V/III ratio
Authors:
Yoon, SF
Zhang, PH
Zheng, HQ
Radhakrishnan, K
Citation: Sf. Yoon et al., Molecular beam epitaxial growth of In1-x-yGaxAlyAs: effects of substrate temperature and V/III ratio, MATER CH PH, 59(1), 1999, pp. 20-25
Authors:
Zheng, HQ
Storch, GA
Zang, CY
Peret, TCT
Park, CS
Anderson, LJ
Citation: Hq. Zheng et al., Genetic variability in envelope-associated protein genes of closely related group A strains of respiratory syncytial virus, VIRUS RES, 59(1), 1999, pp. 89-99
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Ang, KS
Wang, H
Ng, GI
Citation: Sf. Yoon et al., 0.25-mu m gate In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistors grown by solid-source molecular beam epitaxy, SOL ST ELEC, 43(4), 1999, pp. 785-789
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Kam, HT
Degenhardt, J
Citation: Sf. Yoon et al., Fabrication and characterisation of double heterojunction In0.48Ga0.52P/In0.20Ca0.80As high electron mobility transistors grown by solid-source molecular beam epitaxy, SOL ST ELEC, 43(11), 1999, pp. 2097-2101
Authors:
Zheng, HQ
Yoon, SF
Radhakrishnan, K
Ng, GI
Citation: Hq. Zheng et al., Improved transport properties of InxGa1-xP/In0.2Ga0.8As/GaAs pseudomorphichigh electron mobility transistor structures, SOL ST COMM, 112(12), 1999, pp. 661-664
Authors:
Yoon, SF
Kam, AHT
Gay, BP
Zheng, HQ
Ng, GI
Citation: Sf. Yoon et al., Study of In0.48Ga0.52P/In0.2Ga0.8As/GaAs pseudomorphic high electron mobility transistor using a two-dimensional device simulator, MICROELEC J, 30(8), 1999, pp. 745-752
Authors:
Yoon, SF
Gay, BP
Zheng, HQ
Ang, KS
Wang, H
Ng, GI
Citation: Sf. Yoon et al., Fabrication and characteristics of In0.48Ga0.52P/In0.20Ga0.80As/GaAs pseudomorphic high electron mobility transistor grown by solid-source molecular beam epitaxy, MICROELEC J, 30(1), 1999, pp. 23-28
Authors:
Radhakrishnan, K
Patrick, THK
Zheng, HQ
Zhang, PH
Yoon, SF
Citation: K. Radhakrishnan et al., InP/InxGa1-xAs (0.53 <= x <= 0.81) high electron mobility transistor structures grown by solid source molecular beam epitaxy, J CRYST GR, 207(1-2), 1999, pp. 8-14
Authors:
Radhakrishnan, K
Zheng, HQ
Zhang, PH
Yoon, SF
Ng, GI
Citation: K. Radhakrishnan et al., Characterization of silicon-doped InP grown by solid-source molecular beamepitaxy using a valved phosphorus cracker cell, J CRYST GR, 204(3), 1999, pp. 275-281
Authors:
Yoon, SF
Lui, PY
Zheng, HQ
Citation: Sf. Yoon et al., Deep-level transient spectroscopy characterization of In0.48Ga0.52P grown at different V/III ratio using a valved phosphorus cracker cell in solid source molecular beam epitaxy, J CRYST GR, 203(1-2), 1999, pp. 31-39
Authors:
Zheng, HQ
Radhakrishnan, K
Wang, H
Zhang, PH
Yoon, SF
Ng, GI
Citation: Hq. Zheng et al., Characterization of beryllium doped Al0.33Ga0.67As layers grown by molecular beam epitaxy, J CRYST GR, 197(4), 1999, pp. 762-768
Authors:
Yoon, SF
Lui, PY
Zheng, HQ
Citation: Sf. Yoon et al., Characterization of solid source MBE-grown In0.48Ga0.52P/In0.2Ga0.8As/GaAsstructures using X-ray reflectivity technique, J CRYST GR, 197(1-2), 1999, pp. 59-66