Authors:
Shi, W
Zhang, DH
Zheng, HQ
Yoon, SF
Kam, CH
Raman, A
Citation: W. Shi et al., Effects of arsenic beam equivalent pressure on InGaAsP grown by solid source molecular beam epitaxy with continuous white phosphorous production, J CRYST GR, 197(1-2), 1999, pp. 89-94
Citation: H. Wang et al., Nondestructive determination of beryllium outdiffusion in AlGaAs/GaAs heterojunction bipolar transistor structures by low-temperature photoluminescence, J APPL PHYS, 86(8), 1999, pp. 4267-4272
Citation: H. Wang et al., A comprehensive study of AlGaAs/GaAs beryllium- and carbon-doped base heterojunction bipolar transistor structures subjected to rapid thermal processing, J APPL PHYS, 86(11), 1999, pp. 6468-6473
Citation: Sf. Yoon et al., Transport and photoluminescence of silicon-doped GaInP grown by a valved phosphorus cracker cell in solid source molecular beam epitaxy, J APPL PHYS, 85(10), 1999, pp. 7374-7379
Citation: H. Wang et al., Assessment of beryllium out-diffusion in AlGaAs/GaAs heterojunction bipolar transistors using low-temperature photoluminescence technique, IEEE DEVICE, 46(4), 1999, pp. 809-811