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Results: 1-25/49
Authors:
Zhao, ZM
Jiang, RL
Chen, P
Xi, DJ
Shen, B
Zhang, R
Zheng, YD
Citation: Zm. Zhao et al., Effects of contact barriers on Si-substrated GaN photodetectors, J VAC SCI B, 19(1), 2001, pp. 286-289
Authors:
Wang, T
Zheng, YD
Li, TB
Ma, MB
Gao, YJ
Citation: T. Wang et al., Structures of mylonitic granites of the Yagan metamorphic core complex on Sino-Mongolian border - implications for its kinematics and chronology, PROG NAT SC, 11(10), 2001, pp. 766-771
Authors:
Zhou, YG
Shen, B
Liu, J
Zhou, HM
Yu, HQ
Zhang, R
Shi, Y
Zheng, YD
Citation: Yg. Zhou et al., Extraction of polarization-induced charge density in modulation-doped AlxGa1-xN/GaN heterostructure through the simulation of the Schottky capacitance-voltage characteristics, ACT PHY C E, 50(9), 2001, pp. 1774-1778
Authors:
Li, WP
Liu, YM
Zhang, R
Chen, J
Cheng, P
Yuan, XL
Zhou, YG
Shen, B
Jiang, RL
Liu, ZG
Zheng, YD
Citation: Wp. Li et al., Improvement of metal-ferroelectric-silicon structures without buffer layers between Si and ferroelectric films, APPL PHYS A, 72(1), 2001, pp. 85-87
Authors:
Shi, Y
Bu, HM
Yuan, XL
Gu, SL
Shen, B
Han, P
Zhang, R
Zheng, YD
Citation: Y. Shi et al., Switching kinetics of interface states in deep submicrometre SOI n-MOSFETs, SEMIC SCI T, 16(1), 2001, pp. 21-25
Authors:
Wang, F
Zhang, R
Chen, ZZ
Wu, XS
Gu, SL
Shen, B
Zheng, YD
Jiang, SS
Citation: F. Wang et al., Crystal tilts in epitaxially laterally overgrown GaN films determined by four-circle x-ray diffraction, CHIN PHYS L, 18(6), 2001, pp. 813-815
Authors:
Li, X
Li, CF
Li, JQ
Zheng, YD
Citation: X. Li et al., Surface second-harmonic generation circular dichroism in helix molecular films, CHIN PHYS L, 18(3), 2001, pp. 382-384
Authors:
Shen, B
Shi, HT
Zhang, R
Chen, ZZ
Zheng, YD
Citation: B. Shen et al., Electrical and optical properties of InGaN/AlGaN double heterostructure blue light-emitting diodes, CHIN PHYS L, 18(2), 2001, pp. 283-285
Authors:
Shen, B
Zhang, R
Shi, Y
Zheng, YD
Someya, T
Arakawa, Y
Citation: B. Shen et al., Growth and characterization of modulation-doped AlxGa1-xN/GaN heterostructures, CHIN PHYS L, 18(1), 2001, pp. 129-131
Authors:
Yang, HG
Shi, Y
Bu, HM
Wu, J
Zhao, B
Yuan, XL
Shen, B
Han, P
Zhang, R
Zheng, YD
Citation: Hg. Yang et al., Simulation of electron storage in Ge/Si hetero-nanocrystal memory, SOL ST ELEC, 45(5), 2001, pp. 767-771
Authors:
Gu, SL
Zhang, R
Shi, Y
Zheng, YD
Citation: Sl. Gu et al., Epitaxial lateral overgrowth of GaN on molecular beam epitaxy GaN buffer layers on Si substrates by hydride vapour phase epitaxy, J PHYS D, 34(13), 2001, pp. 1951-1954
Authors:
Gu, SL
Zhang, R
Shi, Y
Zheng, YD
Zhang, L
Dwikusuma, F
Kuech, TF
Citation: Sl. Gu et al., The impact of initial growth and substrate nitridation on thick GaN growthon sapphire by hydride vapor phase epitaxy, J CRYST GR, 231(3), 2001, pp. 342-351
Authors:
Chen, P
Zhang, R
Zhao, ZM
Xi, DJ
Shen, B
Chen, ZZ
Zhou, YG
Xie, SY
Lu, WF
Zheng, YD
Citation: P. Chen et al., Growth of high quality GaN layers with AlN buffer on Si(111) substrates, J CRYST GR, 225(2-4), 2001, pp. 150-154
Authors:
Jiang, CP
Guo, SL
Huang, ZM
Yu, J
Gui, YS
Zheng, GZ
Chu, JH
Zheng, ZW
Shen, B
Zheng, YD
Citation: Cp. Jiang et al., Subband electron properties of modulation-doped AlxGa1-xN/GaN heterostructures with different barrier thicknesses, APPL PHYS L, 79(3), 2001, pp. 374-376
Authors:
Chen, P
Wang, W
Chua, SJ
Zheng, YD
Citation: P. Chen et al., High-frequency capacitance-voltage measurement of plasma-enhanced chemical-vapor-deposition-grown SiO2/n-GaN metal-insulator-semiconductor structures, APPL PHYS L, 79(21), 2001, pp. 3530-3532
Authors:
Zhao, ZM
Jiang, RL
Chen, P
Xi, DJ
Yu, HQ
Shen, B
Zhang, R
Shi, Y
Gu, SL
Zheng, YD
Citation: Zm. Zhao et al., Ti/Al/Pt/Au and Al ohmic contacts on Si-substrated GaN, APPL PHYS L, 79(2), 2001, pp. 218-220
Authors:
Chu, RM
Zhou, YG
Zheng, YD
Han, P
Shen, B
Gu, SL
Citation: Rm. Chu et al., Influence of doping on the two-dimensional electron gas distribution in AlGaN/GaN heterostructure transistors, APPL PHYS L, 79(14), 2001, pp. 2270-2272
Authors:
Zhang, R
Shi, Y
Zhou, YG
Shen, B
Zheng, YD
Kuan, TS
Gu, SL
Zhang, L
Hansen, DM
Kuech, TF
Citation: R. Zhang et al., Structural properties of laterally overgrown GaN, MRS I J N S, 5, 2000, pp. NIL_100-NIL_104
Authors:
Chen, ZH
Zhang, R
Zhu, JM
Shen, B
Zhou, YG
Chen, P
Li, WP
Shi, Y
Gu, SL
Zheng, YD
Citation: Zh. Chen et al., Microstructure and physical properties of GaN films on sapphire substrates, MRS I J N S, 5, 2000, pp. NIL_210-NIL_215
Authors:
Li, WP
Zhang, R
Yin, J
Liu, XH
Zhou, YG
Shen, B
Chen, P
Chen, ZZ
Shi, Y
Jiang, RL
Liu, ZG
Zheng, YD
Citation: Wp. Li et al., Fabrication and characterization of metal-ferroelectric-GaN structures, MRS I J N S, 5, 2000, pp. NIL_515-NIL_519
Authors:
Chen, P
Zhang, R
Xu, XF
Chen, ZZ
Zhou, YG
Xie, SY
Shi, Y
Shen, B
Gu, SL
Huang, ZC
Hu, J
Zheng, YD
Citation: P. Chen et al., Oxidation of gallium nitride epilayers in dry oxygen, MRS I J N S, 5, 2000, pp. NIL_745-NIL_750
Authors:
Jiang, RL
Lo, ZY
Chen, WM
Zang, L
Zhu, SM
Liu, XB
Cheng, XM
Chen, ZZ
Chen, P
Han, P
Zheng, YD
Citation: Rl. Jiang et al., Normal-incidence SiGe/Si photodetectors with different buffer layers, J VAC SCI B, 18(3), 2000, pp. 1251-1253
Authors:
Xin, L
Li, CF
Li, JQ
Zheng, YD
Citation: L. Xin et al., Relationship between intensity of surface second harmonic generation and molecular structure in helix molecular films, CHIN PHYS, 9(12), 2000, pp. 910-912
Authors:
Zhang, JJ
Zheng, YD
Liu, SW
Citation: Jj. Zhang et al., Application of general shear theory to the study of formation mechanism for the metamorphic core complex: A case of Xiaoqinling in central China, ACT GEO S-E, 74(1), 2000, pp. 19-28
Authors:
Yuan, XL
Shi, Y
Yang, HG
Bu, HM
Wu, J
Zhao, B
Zhang, R
Zheng, YD
Citation: Xl. Yuan et al., Charging dynamics of Si-quantum dots in tunnel capacitor, ACT PHY C E, 49(10), 2000, pp. 2037-2040