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Results: 1-9 |
Results: 9
Microstructure of bulk GaN layer grown on sapphire substrates with amorphous buffer
Authors: Bel'kov, VV Zhilyaev, YV Mosina, GN Raevskii, SD Sorokin, LM Shcheglov, MP
Citation: Vv. Bel'Kov et al., Microstructure of bulk GaN layer grown on sapphire substrates with amorphous buffer, PHYS SOL ST, 42(9), 2000, pp. 1606-1609
Polarization-dependent inhomogeneous broadening of the edge luminescence band of hexagonal gallium nitride
Authors: Kompan, ME Shabanov, IY Zhilyaev, YV
Citation: Me. Kompan et al., Polarization-dependent inhomogeneous broadening of the edge luminescence band of hexagonal gallium nitride, PHYS SOL ST, 42(6), 2000, pp. 1041-1044
Nanorelief of a GaN surface: The effect of sulfide treatment
Authors: Bessolov, VN Zhilyaev, YV Zavarin, EE Kompan, ME Konenkova, EV Usikov, AS Fedirko, VA
Citation: Vn. Bessolov et al., Nanorelief of a GaN surface: The effect of sulfide treatment, SEMICONDUCT, 34(11), 2000, pp. 1301-1304
The dislocation origin and model of excess tunnel current in GaP p-n structures
Authors: Evstropov, VV Dzhumaeva, M Zhilyaev, YV Nazarov, N Sitnikova, AA Fedorov, LM
Citation: Vv. Evstropov et al., The dislocation origin and model of excess tunnel current in GaP p-n structures, SEMICONDUCT, 34(11), 2000, pp. 1305-1310
Study of the polarization photoluminescence of thick epitaxial GaN layers
Authors: Zhilyaev, YV Krivolapchuk, VV Safronov, IN
Citation: Yv. Zhilyaev et al., Study of the polarization photoluminescence of thick epitaxial GaN layers, SEMICONDUCT, 33(7), 1999, pp. 716-718
Sulfide passivation of GaAs power diodes
Authors: Botnaryuk, VM Zhilyaev, YV Konenkova, EV
Citation: Vm. Botnaryuk et al., Sulfide passivation of GaAs power diodes, SEMICONDUCT, 33(6), 1999, pp. 662-664
Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures
Authors: Botnaryuk, VM Zhilyaev, YV Rud', YV Rud', VY
Citation: Vm. Botnaryuk et al., Oscillations in the induced photopleochroism of In(Au)/Si thin-film structures, SEMICONDUCT, 33(4), 1999, pp. 412-415
Polarization photosensitivity of GaN/Si heterojunctions
Authors: Botnaruk, VM Belkov, VV Zhilyaev, YV Raevsky, SD Rud, VY Rud, YV Fedorov, LM
Citation: Vm. Botnaruk et al., Polarization photosensitivity of GaN/Si heterojunctions, SEMICONDUCT, 33(3), 1999, pp. 301-304
Photoluminescence of n-GaN: influence of chemical treatment of the surfaceusing sulfide solutions
Authors: Zhilyaev, YV Kompan, ME Konenkova, EV Mokeev, AS Raevskii, SD
Citation: Yv. Zhilyaev et al., Photoluminescence of n-GaN: influence of chemical treatment of the surfaceusing sulfide solutions, TECH PHYS L, 24(12), 1998, pp. 986-987
Risultati: 1-9 |