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Results:
1-7
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Results: 7
Authors:
Kenyon, M
Cobb, JL
Amar, A
Song, D
Zimmerman, NM
Lobb, CJ
Wellstood, FC
Citation: M. Kenyon et al., Dynamics of a charged fluctuator in an Al-AlOx-Al single-electron transistor, J L TEMP PH, 123(1-2), 2001, pp. 103-126
Authors:
Zimmerman, NM
Huber, WH
Fujiwara, A
Takahashi, Y
Citation: Nm. Zimmerman et al., Excellent charge offset stability in a Si-based single-electron tunneling transistor, APPL PHYS L, 79(19), 2001, pp. 3188-3190
Authors:
Eremets, MI
Gregoryanz, EA
Struzhkin, VV
Mao, HK
Hemley, RJ
Mulders, N
Zimmerman, NM
Citation: Mi. Eremets et al., Electrical conductivity of xenon at megabar pressures, PHYS REV L, 85(13), 2000, pp. 2797-2800
Authors:
Eichenberger, AL
Keller, MW
Martinis, JM
Zimmerman, NM
Citation: Al. Eichenberger et al., Frequency dependence of a cryogenic capacitor measured using single electron tunneling devices, J L TEMP PH, 118(5-6), 2000, pp. 317-324
Authors:
Zimmerman, NM
Keller, MW
Citation: Nm. Zimmerman et Mw. Keller, Dynamic input capacitance of single-electron transistors and the effect oncharge-sensitive electrometers, J APPL PHYS, 87(12), 2000, pp. 8570-8574
Authors:
Kenyon, M
Cobb, JL
Amar, A
Song, D
Zimmerman, NM
Lobb, CJ
Wellstood, FC
Citation: M. Kenyon et al., Behavior of a charged two-level fluctuator in an Al-AlOx-Al single-electron transistor in the normal and superconducting state, IEEE APPL S, 9(2), 1999, pp. 4261-4264
Authors:
Keller, MW
Eichenberger, AL
Martinis, JM
Zimmerman, NM
Citation: Mw. Keller et al., A capacitance standard based on counting electrons, SCIENCE, 285(5434), 1999, pp. 1706-1709
Risultati:
1-7
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