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Results: 1-8 |
Results: 8
Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates
Authors: Macfarlane, PJ Zvanut, ME Janowski, GM
Citation: Pj. Macfarlane et al., Intrinsic point defects in oxidized 3C epitaxial layers on Si substrates, J APPL PHYS, 89(2), 2001, pp. 955-959
HF chemical etching of SiO2 on 4H and 6H SiC
Authors: Johnson, MB Zvanut, ME Richardson, O
Citation: Mb. Johnson et al., HF chemical etching of SiO2 on 4H and 6H SiC, J ELEC MAT, 29(3), 2000, pp. 368-371
Characterization of paramagnetic defect centers in three polytypes of dry heat treated, oxidized SiC
Authors: Macfarlane, PJ Zvanut, ME
Citation: Pj. Macfarlane et Me. Zvanut, Characterization of paramagnetic defect centers in three polytypes of dry heat treated, oxidized SiC, J APPL PHYS, 88(7), 2000, pp. 4122-4127
Reduction and creation of paramagnetic centers on surfaces Of three different polytypes of SIC
Authors: Macfarlane, PJ Zvanut, ME
Citation: Pj. Macfarlane et Me. Zvanut, Reduction and creation of paramagnetic centers on surfaces Of three different polytypes of SIC, J VAC SCI B, 17(4), 1999, pp. 1627-1631
Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SIC
Authors: Macfarlane, PJ Zvanut, ME
Citation: Pj. Macfarlane et Me. Zvanut, Generation and annealing characteristics of paramagnetic centers in oxidized 3C-SiC and 6H-SIC, J ELEC MAT, 28(3), 1999, pp. 144-147
Dangling bond defects in SiC: the dependence on oxidation time
Authors: Macfarlane, PJ Zvanut, ME
Citation: Pj. Macfarlane et Me. Zvanut, Dangling bond defects in SiC: the dependence on oxidation time, MICROEL ENG, 48(1-4), 1999, pp. 269-272
The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films
Authors: Zvanut, ME Chun, W Stahlbush, RE
Citation: Me. Zvanut et al., The effect of confinement and temperature on the initial hole trapping efficiency of buried oxide films, MICROEL ENG, 48(1-4), 1999, pp. 347-350
Characterization of the luminescence center in photo- and electroluminescent amorphous silicon oxynitride films
Authors: Price, KJ McNeil, LE Suvkanov, A Irene, EA MacFarlane, PJ Zvanut, ME
Citation: Kj. Price et al., Characterization of the luminescence center in photo- and electroluminescent amorphous silicon oxynitride films, J APPL PHYS, 86(5), 1999, pp. 2628-2637
Risultati: 1-8 |