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Results:
1-7
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Results: 7
Authors:
Gutierrez, HR
Cotta, MA
de Carvalho, MMG
Citation: Hr. Gutierrez et al., Faceting evolution during self-assembling of InAs/InP quantum wires, APPL PHYS L, 79(23), 2001, pp. 3854-3856
Authors:
Gutierrez, HR
Cotta, MA
Bortoleto, JRR
Ugarte, D
Pudenzi, MAA
Gobbi, AL
de Carvalho, MMG
Citation: Hr. Gutierrez et al., Surface size effect on the growth mode and morphology of InP epitaxial films, PHYS REV B, 62(23), 2000, pp. 15409-15412
Authors:
Bettini, J
de Carvalho, MMG
Cotta, MA
Pudenzi, MAA
Frateschi, NC
Silva, A
Cardoso, LP
Landers, R
Citation: J. Bettini et al., Analysis of Be doping of InGaP lattice matched to GaAs, J CRYST GR, 208(1-4), 2000, pp. 65-72
Authors:
Hayashi, MA
Avanci, LH
Cardoso, LP
Bettini, J
de Carvalho, MMG
Morelhao, SL
Collins, SP
Citation: Ma. Hayashi et al., High-resolution synchrotron radiation Renninger scan to examine hybrid reflections in InGaP/GaAs(001), J SYNCHROTR, 6, 1999, pp. 29-33
Authors:
Gutierrez, HR
Cotta, MA
Nakaema, WM
de Carvalho, MMG
Gobbi, AL
Citation: Hr. Gutierrez et al., Size effects on the growth mode and roughness of sub-micron structures grown by selective area epitaxy, BRAZ J PHYS, 29(4), 1999, pp. 764-767
Authors:
Coluci, VR
Cotta, MA
de Carvalho, MMG
Citation: Vr. Coluci et al., Growth of Be-doped homoepitaxial GaAs films on rough substrates, J CRYST GR, 205(1-2), 1999, pp. 36-42
Authors:
de Carvalho, MMG
Betinni, J
Pudenzi, MAA
Cardoso, LP
Cotta, MA
Citation: Mmg. De Carvalho et al., Evidence of Be3P2 formation during growth of Be-doped phosphorus-based semiconductor compounds, APPL PHYS L, 74(24), 1999, pp. 3669-3671
Risultati:
1-7
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