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Citation: J. Guillot et al., Amorphous TiO2 in LP-OMCVD TiNxOy thin films revealed by XPS, APPL SURF S, 177(4), 2001, pp. 268-272

Authors: Fabreguette, F Maglione, M Imhoff, L Domenichini, B de Lucas, MCM Sibillot, P Bourgeois, S Sacilotti, M

Citation: F. Fabreguette et al., Conductimetry and impedance spectroscopy study of low pressure metal organic chemical vapor deposition TiNxOy films as a function of the growth temperature: a percolation approach, APPL SURF S, 175, 2001, pp. 574-578

Authors: Fabreguette, F Imhoff, L Heintz, O Maglione, M Domenichini, B de Lucas, MCM Sibillot, P Bourgeois, S Sacilotti, M

Citation: F. Fabreguette et al., Structural and in depth characterization of newly designed conducting/insulating TiNxOy/TiO2 multilayers obtained by one step LP-MOCVD growth, APPL SURF S, 175, 2001, pp. 685-690

Authors: de Lucas, MCM Fabreguette, F Collin, S Bourgeois, S

Citation: Mcm. De Lucas et al., MOCVD growth of TiO2 thin films on single crystal GaAs substrates, INT J INORG, 2(2-3), 2000, pp. 255-259

Authors: Fabreguette, F Imhoff, L Maglione, M Domenichini, B de Lucas, MCM Sibillot, P Bourgeois, S Sacilotti, M

Citation: F. Fabreguette et al., Correlation between the electrical properties and morphology of low-pressure MOCVD titanium oxynitride thin films grown at various temperatures, CHEM VAPOR, 6(3), 2000, pp. 109-114