AAAAAA
Results:
1-15
|
Results: 15
Authors:
Feltin, E
Dalmasso, S
de Mierry, P
Beaumont, B
Lahreche, H
Bouille, A
Haas, H
Leroux, M
Gibart, P
Citation: E. Feltin et al., Green InGaN light-emitting diodes grown on silicon (111) by metalorganic vapor phase epitaxy, JPN J A P 2, 40(7B), 2001, pp. L738-L740
Authors:
Schenk, HPD
Leroux, M
de Mierry, P
Laugt, M
Omnes, F
Gibart, P
Citation: Hpd. Schenk et al., Photoluminescence and absorption spectroscopy of silicon-doped InGaN layers, MAT SCI E B, 82(1-3), 2001, pp. 163-166
Authors:
Theys, B
Teukam, Z
Jomard, F
de Mierry, P
Polyakov, AY
Barbe, M
Citation: B. Theys et al., Deuterium diffusion in Mg-doped GaN layers grown by metalorganic vapour phase epitaxy, SEMIC SCI T, 16(9), 2001, pp. L53-L56
Authors:
Feltin, E
Beaumont, B
Laugt, M
de Mierry, P
Vennegues, P
Lahreche, H
Leroux, M
Gibart, P
Citation: E. Feltin et al., Stress control in GaN grown on silicon (111) by metalorganic vapor phase epitaxy, APPL PHYS L, 79(20), 2001, pp. 3230-3232
Authors:
de Mierry, P
Beaumont, B
Feltin, E
Schenk, HPD
Gibart, P
Jomard, F
Rushworth, S
Smith, L
Odedra, R
Citation: P. De Mierry et al., Influence of the Mg precursor on the incorporation of Mg in MOVPE grown GaN., MRS I J N S, 5(8), 2000, pp. 1-3
Authors:
Schenk, HPD
Leroux, M
de Mierry, P
Citation: Hpd. Schenk et al., Luminescence and absorption in InGaN epitaxial layers and the van Roosbroeck-Shockley relation, J APPL PHYS, 88(3), 2000, pp. 1525-1534
Authors:
Vigue, F
de Mierry, P
Faurie, JP
Monroy, E
Calle, F
Munoz, E
Citation: F. Vigue et al., High detectivity ZnSe-based Schottky barrier photodetectors for blue and near-ultraviolet spectral range, ELECTR LETT, 36(9), 2000, pp. 826-827
Authors:
Dalmasso, S
Feltin, E
de Mierry, P
Beaumont, B
Gibart, P
Leroux, M
Citation: S. Dalmasso et al., Green electroluminescent (Ga, In, Al)N LEDs grown on Si (111), ELECTR LETT, 36(20), 2000, pp. 1728-1730
Authors:
de Mierry, P
Lahreche, H
Haffouz, S
Vennegues, P
Beaumont, B
Omnes, F
Gibart, P
Citation: P. De Mierry et al., Sub-bandgap optical absorption of MOVPE-GaN grown under controlled nucleation., MAT SCI E B, 59(1-3), 1999, pp. 24-28
Authors:
Omnes, F
Marenco, N
Haffouz, S
Lahreche, H
de Mierry, P
Beaumont, B
Hageman, P
Monroy, E
Calle, F
Munoz, E
Citation: F. Omnes et al., Low pressure MOVPE grown AlGaN for UV photodetector applications, MAT SCI E B, 59(1-3), 1999, pp. 401-406
Authors:
de Mierry, P
Dalmasso, S
Beaumont, B
Gibart, P
Citation: P. De Mierry et al., Effect of an electric field on the electroluminescence and the photocurrent in InGaN single quantum well light emitting diodes, PHYS ST S-B, 216(1), 1999, pp. 321-324
Authors:
Schenk, HPD
de Mierry, P
Omnes, F
Gibart, P
Citation: Hpd. Schenk et al., Spectroscopic studies of InGaN ternary alloys, PHYS ST S-A, 176(1), 1999, pp. 307-311
Authors:
Omnes, F
Marenco, N
Beaumont, B
de Mierry, P
Monroy, E
Calle, F
Munoz, E
Citation: F. Omnes et al., Metalorganic vapor-phase epitaxy-grown AlGaN materials for visible-blind ultraviolet photodetector applications, J APPL PHYS, 86(9), 1999, pp. 5286-5292
Authors:
Schenk, HPD
de Mierry, P
Laugt, M
Omnes, F
Leroux, M
Beaumont, B
Gibart, P
Citation: Hpd. Schenk et al., Indium incorporation above 800 degrees C during metalorganic vapor phase epitaxy of InGaN, APPL PHYS L, 75(17), 1999, pp. 2587-2589
Authors:
Haffouz, S
Lahreche, H
Vennegues, P
de Mierry, P
Beaumont, B
Omnes, F
Gibart, P
Citation: S. Haffouz et al., The effect of the Si/N treatment of a nitridated sapphire surface on the growth mode of GaN in low-pressure metalorganic vapor phase epitaxy, APPL PHYS L, 73(9), 1998, pp. 1278-1280
Risultati:
1-15
|