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Citation: R. Lindsay et al., Optimized thermal processing for Ti-capped CoSi2 for 0.13 mu m technology, MICROEL ENG, 55(1-4), 2001, pp. 157-162

Authors: Vantomme, A de Potter, M Baklanov, M Maex, K

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Citation: A. Lauwers et al., Comparative study of Ni-silicide and Co-silicide for sub 0.25-mu m technologies, MICROEL ENG, 50(1-4), 2000, pp. 103-116

Authors: Kondoh, E Conard, T Brijs, B Jin, S Bender, H de Potter, M Maex, K

Citation: E. Kondoh et al., A chemical role of refractory metal caps in Co silicidation: Evidence of SiO2 reduction by Ti cap, J MATER RES, 14(11), 1999, pp. 4402-4408

Authors: Maex, K Lauwers, A Besser, P Kondoh, E de Potter, M Steegen, A

Citation: K. Maex et al., Self-aligned CoSi2 for 0.18 mu m and below, IEEE DEVICE, 46(7), 1999, pp. 1545-1550

Authors: Kim, YB Baklanov, MR Conard, T de Potter, M Vanhaeleemeersch, S

Citation: Yb. Kim et al., Characterization of the post dry-etch cleaning of silicon for Ti-self-aligned silicide technology, J ELCHEM SO, 146(4), 1999, pp. 1549-1556