Citation: Ga. De Wijs et A. Selloni, Patterning of Si(001) with halogens: Surface structure as a function of the halogen chemical potential - art. no. 041402, PHYS REV B, 6404(4), 2001, pp. 1402
Citation: Ga. De Wijs et Ra. De Groot, Towards 100% spin-polarized charge-injection: The half-metallic NiMnSb/CdSinterface - art. no. 020402, PHYS REV B, 6402(2), 2001, pp. 0402
Authors:
Fang, CM
de Wijs, GA
de Groot, RA
Metselaar, R
Hintzen, HT
de With, G
Citation: Cm. Fang et al., O/N ordering in Y2Si3O3N4 with the melilite-type structure from first-principles calculations, CHEM MATER, 12(4), 2000, pp. 1071-1075
Authors:
Hageman, JCL
de Wijs, GA
de Groot, RA
Meier, RJ
Citation: Jcl. Hageman et al., Bond scission in a perfect polyethylene chain and the consequences for theultimate strength, MACROMOLEC, 33(24), 2000, pp. 9098-9108
Authors:
de Wijs, GA
de Boer, PK
de Groot, RA
Kresse, G
Citation: Ga. De Wijs et al., Anomalous behavior of the semiconducting gap in WO3 from first-principles calculations, PHYS REV B, 59(4), 1999, pp. 2684-2693