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Results: 1-10 |
Results: 10
Electrical properties of rapid thermally annealed SiNx : H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy
Authors: Martinez, FL del Prado, A Martil, I Gonzalez-Diaz, G Kliefoth, K Fussel, W
Citation: Fl. Martinez et al., Electrical properties of rapid thermally annealed SiNx : H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy, SEMIC SCI T, 16(7), 2001, pp. 534-542
Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealing - art. no. 245320
Authors: Martinez, FL del Prado, A Martil, I Gonzalez-Diaz, G Bohne, W Fuhs, W Rohrich, J Selle, B Sieber, I
Citation: Fl. Martinez et al., Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx : H dielectric thin films treated by rapid thermal annealing - art. no. 245320, PHYS REV B, 6324(24), 2001, pp. 5320
Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx : H/Si devices
Authors: Martinez, FL San Andres, E del Prado, A Martil, I Bravo, D Lopez, FJ
Citation: Fl. Martinez et al., Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx : H/Si devices, J APPL PHYS, 90(3), 2001, pp. 1573-1581
Compositional analysis of amorphous SiNx : H films by ERDA and infrared spectroscopy
Authors: Bohne, W Fuhs, W Rohrich, J Selle, B Gonzalez-Diaz, G Martil, I Martinez, FL del Prado, A
Citation: W. Bohne et al., Compositional analysis of amorphous SiNx : H films by ERDA and infrared spectroscopy, SURF INT AN, 30(1), 2000, pp. 534-537
Defect structure of SiNx : H films and its evolution with annealing temperature
Authors: Martinez, FL del Prado, A Martil, I Bravo, D Lopez, FJ
Citation: Fl. Martinez et al., Defect structure of SiNx : H films and its evolution with annealing temperature, J APPL PHYS, 88(4), 2000, pp. 2149-2151
Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx : H films deposited by electron cyclotron resonance
Authors: San Andres, E del Prado, A Martinez, FL Martil, I Bravo, D Lopez, FJ
Citation: E. San Andres et al., Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx : H films deposited by electron cyclotron resonance, J APPL PHYS, 87(3), 2000, pp. 1187-1192
Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance
Authors: del Prado, A Martinez, FL Martil, I Gonzalez-Diaz, G Fernandez, M
Citation: A. Del Prado et al., Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance, J VAC SCI A, 17(4), 1999, pp. 1263-1268
Thermal stability of a-SiNx : H films deposited by plasma electron cyclotron resonance
Authors: Martinez, FL del Prado, A Bravo, D Lopez, F Martil, I Gonzalez-Diaz, G
Citation: Fl. Martinez et al., Thermal stability of a-SiNx : H films deposited by plasma electron cyclotron resonance, J VAC SCI A, 17(4), 1999, pp. 1280-1284
Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature
Authors: del Prado, A Martil, I Fernandez, M Gonzalez-Diaz, G
Citation: A. Del Prado et al., Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature, THIN SOL FI, 344, 1999, pp. 437-440
Thermally induced changes in the optical properties of SiNx : H films deposited by the electron cyclotron resonance plasma method
Authors: Martinez, FL del Prado, A Martil, I Gonzalez-Diaz, G Selle, B Sieber, I
Citation: Fl. Martinez et al., Thermally induced changes in the optical properties of SiNx : H films deposited by the electron cyclotron resonance plasma method, J APPL PHYS, 86(4), 1999, pp. 2055-2061
Risultati: 1-10 |