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Results: 1-20 |
Results: 20

Authors: Rong, B Reeves, RJ Brown, SA Alkaisi, MM van der Drift, E Cheung, R Sloof, WG
Citation: B. Rong et al., A study of reactive ion etching damage effects in GaN, MICROEL ENG, 57-8, 2001, pp. 585-591

Authors: ten Kortenaar, MV de Goeij, JJM Kolar, ZI Frens, G Lusse, PJ Zuiddam, MR van der Drift, E
Citation: Mv. Ten Kortenaar et al., Electroless silver deposition in 100 nm silicon structures, J ELCHEM SO, 148(1), 2001, pp. C28-C33

Authors: Onipko, AI Berggren, KF Klymenko, YO Malysheva, LI Rosink, JJWM Geerligs, LJ van der Drift, E Radelaar, S
Citation: Ai. Onipko et al., Scanning tunneling spectroscopy on pi-conjugated phenyl-based oligomers: Asimple physical model, PHYS REV B, 61(16), 2000, pp. 11118-11124

Authors: van Veen, RG Verbruggen, AH van der Drift, E Schaffler, F Radelaar, S
Citation: Rg. Van Veen et al., Magnetoresistance fluctuations in short n-type Si/SiGe heterostructure wires, PHYS REV B, 61(11), 2000, pp. 7545-7552

Authors: Blauw, MA Zijlstra, T Bakker, RA van der Drift, E
Citation: Ma. Blauw et al., Kinetics and crystal orientation dependence in high aspect ratio silicon dry etching, J VAC SCI B, 18(6), 2000, pp. 3453-3461

Authors: Andriesse, MS Zijlstra, T van der Drift, E
Citation: Ms. Andriesse et al., High speed anisotropic dry etching of CoNbZr for next generation magnetic recording, J VAC SCI B, 18(6), 2000, pp. 3462-3466

Authors: Vossen, DLJ de Dood, MJA van Dillen, T Zijlstra, T van der Drift, E Polman, A van Blaaderen, A
Citation: Dlj. Vossen et al., Novel method for solution growth of thin silica films from tetraethoxysilane, ADVAN MATER, 12(19), 2000, pp. 1434-1437

Authors: Lukey, PW Caro, J Zijlstra, T van der Drift, E Radelaar, S
Citation: Pw. Lukey et al., The influence of strain relaxation on the electrical properties of submicron Si/SiGe resonant-tunneling diodes, ANALOG IN C, 24(1), 2000, pp. 27-35

Authors: Zijlstra, T Heimberg, JA van der Drift, E van Loon, DG Dienwiebel, M de Groot, LEM Frenken, JWM
Citation: T. Zijlstra et al., Fabrication of a novel scanning probe device for quantitative nanotribology, SENS ACTU-A, 84(1-2), 2000, pp. 18-24

Authors: Anders, S Smith, AW Jaeger, HM Besseling, R Kes, PH van der Drift, E
Citation: S. Anders et al., Commensurability effects and fluctuations of vortex flow in mesoscopic channels, PHYSICA C, 332(1-4), 2000, pp. 35-39

Authors: Rosink, JJWM Blauw, MA Geerligs, LJ van der Drift, E Rousseeuw, BAC Radelaar, S Sloof, WG Fakkeldij, EJM
Citation: Jjwm. Rosink et al., Self-assembly of pi-conjugated azomethine oligomers by sequential deposition of monomers from solution, LANGMUIR, 16(10), 2000, pp. 4547-4553

Authors: Rosink, JJWM Blauw, MA Geerligs, LJ van der Drift, E Radelaar, S
Citation: Jjwm. Rosink et al., Tunneling spectroscopy study and modeling of electron transport in small conjugated azomethine molecules, PHYS REV B, 62(15), 2000, pp. 10459-10466

Authors: Cheung, R Hay, J van der Drift, E Gao, W
Citation: R. Cheung et al., Improvement of contact resistances on plasma-exposed silicon carbide, SOL ST ELEC, 44(11), 2000, pp. 2081-2083

Authors: Cheung, R Reeves, RJ Brown, SA van der Drift, E Kamp, M
Citation: R. Cheung et al., Effects of dry processing on the optical properties of GaN, J APPL PHYS, 88(12), 2000, pp. 7110-7114

Authors: Zijlstra, T van der Drift, E de Dood, MJA Snoeks, E Polman, A
Citation: T. Zijlstra et al., Fabrication of two-dimensional photonic crystal waveguides for 1.5 mu m insilicon by deep anisotropic dry etching, J VAC SCI B, 17(6), 1999, pp. 2734-2739

Authors: Cheung, R Reeves, RJ Rong, B Brown, SA Fakkeldij, EJM van der Drift, E Kamp, M
Citation: R. Cheung et al., High resolution reactive ion etching of GaN and etch-induced effects, J VAC SCI B, 17(6), 1999, pp. 2759-2763

Authors: Rosink, JJWM Blauw, MA Geerligs, LJ van der Drift, E Rousseeuw, BAC Radelaar, S
Citation: Jjwm. Rosink et al., Growth and scanning tunneling spectroscopy of self-assembled pi-conjugatedoligomers, MAT SCI E C, 8-9, 1999, pp. 267-272

Authors: van Veen, RG Verbruggen, AH van der Drift, E Schaffler, F Radelaar, S
Citation: Rg. Van Veen et al., Experimental study on magnetoresistance phenomena in n-type Si SiGe quantum wires, SEMIC SCI T, 14(6), 1999, pp. 508-516

Authors: van Veen, RG Verbruggen, AH van der Drift, E Radelaar, S Anders, S Jaeger, HM
Citation: Rg. Van Veen et al., Micron-sized Hall probes on a Si/SiGe heterostructure as a tool to study vortex dynamics in high-temperature superconducting crystals, REV SCI INS, 70(3), 1999, pp. 1767-1770

Authors: Gribov, NN Theeuwen, SJCH Caro, J van der Drift, E Tichelaar, FD de Kruijff, TR Hickey, BJ
Citation: Nn. Gribov et al., Fabrication of metallic point contacts: A new approach for devices with a multilayer or a heterointerface, J VAC SCI B, 16(6), 1998, pp. 3943-3947
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