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Citation: D. Herm et al., The influence of doping on charge carrier transport in a-Si : H, SOL EN MAT, 66(1-4), 2001, pp. 195-201

Authors: von Aichberger, S Schieck, R Kunst, M

Citation: S. Von Aichberger et al., Study and characterization of semiconductor junctions for photovoltaic applications by contactless methods, SOL EN MAT, 65(1-4), 2001, pp. 111-117

Authors: Sanders, A Hahneiser, O von Aichberger, S Kunst, M

Citation: A. Sanders et al., The influence of the surface on charge carrier transport in GaAs films, SOL EN MAT, 65(1-4), 2001, pp. 119-124

Authors: von Aichberger, S Feist, H Loffler, J Kunst, M

Citation: S. Von Aichberger et al., In situ monitoring of the deposition of a-Si : H/c-Si heterojunctions by transient photoconductivity measurements, SOL EN MAT, 65(1-4), 2001, pp. 417-422

Authors: Kunst, M Wunsch, F von Aichberger, S

Citation: M. Kunst et al., Recombination at high charge carrier concentrations in a-Si : H films, THIN SOL FI, 383(1-2), 2001, pp. 274-276

Authors: Muller, R Kanschat, P von Aichberger, S Lips, K Fuhs, W

Citation: R. Muller et al., Identification of transport and recombination paths in homo and heterojunction silicon solar cells by electrically detected magnetic resonance, J NON-CRYST, 266, 2000, pp. 1124-1128