Hp. Tuinhout et al., THE FLOATING-GATE MEASUREMENT TECHNIQUE FOR CHARACTERIZATION OF CAPACITOR MATCHING, IEEE transactions on semiconductor manufacturing, 9(1), 1996, pp. 2-8
This paper discusses a new method for characterization of matching of
capacitors using the so-called floating gate capacitance measurement m
ethod [1]. After an introduction of this measurement method, modificat
ions are discussed that were implemented to boost the measurement accu
racy and repeatability from its original thousands of ppm's (0.1 to 0.
3%) to values as low as 50 ppm (0.005%), Instrumental in these improve
ments are the introduction of a double slope measurement procedure to
compensate for systematic offsets, as well as the use of repeated meas
urements and averaging to reduce the influence of the measurements sys
tem's noise, The improved accuracy, including statistical characteriza
tion of the measurement system's short term repeatability, are require
d for correct determination of capacitor matching of the extremely wel
l-matching double-polysilicon capacitor structures that were used for
this study.