Jn. Broughton et al., TITANIUM SPUTTER-DEPOSITION AT LOW-PRESSURES AND LONG THROW DISTANCES, IEEE transactions on semiconductor manufacturing, 9(1), 1996, pp. 122-127
Sputter deposition of titanium into trench and via topography has been
studied under conditions of pressure as low as 0.3 mTorr (0.04 Pa) fo
r long (30 cm) and short (9 cm) throw distances, Film resistivity and
deposition rates at both distances have been measured for pressures fr
om 0.3 mTorr up to 5 mTorr (0.67 Pa). Pinhole experiments have been us
ed to examine the evolution of the angular distribution of sputtered f
lux as a function of pressure and distance, The experimental results s
how that by increasing the throw distance and reducing pressure, the b
ottom coverage in high aspect ratio topographical features may be incr
eased to almost 90% but thickness nonuniformity under these conditions
remains a significant problem due to the size of the target, We have
tested for the presence of resputtering in the highly energetic, low c
ollision regime which arises at low pressure and no resputtered materi
al has been detected.