S. Saxena et al., SIMULTANEOUS CONTROL OF MULTIPLE MEASURES OF NONUNIFORMITY USING SITEMODELS AND MONITOR WAFER CONTROL, IEEE transactions on semiconductor manufacturing, 9(1), 1996, pp. 128-135
Present day semiconductor manufacturing processes are subject to tight
specifications, High yields with tight process specifications require
drive to target process control, As the size of the wafer in the semi
conductor industry increases, nonuniformity across the wafer becomes a
crucial yield limiting issue, Modeling nonuniformity in terms of the
equipment settings permits calculation of recipes required to achieve
the desired nonuniformity, However, models for single measures of nonu
niformity, such as standard deviation, or range, do not capture all as
pects of the nonuniformity and often do not model well in terms of the
equipment settings, This paper describes the use of spatial models to
simultaneously quantify multiple measures of nonuniformity, and a con
troller to keep the nonuniformities within specifications, Use of spat
ial models in conjunction with a monitor wafer controller (MWC) enable
s the simultaneous control of multiple nonuniformity measures, The pap
er presents the results of applying the MWC with spatial models to a p
lasma enhanced TEOS (PETEOS) deposition process on an Applied Material
s Precision 5000 (AMT5000), The controller has been keeping the PETEOS
process within specifications for over two years.