Kp. Fahey, METHODS FOR MEASUREMENT OF DEVELOPMENT PARAMETERS IN THE MANUFACTURING LINE FOR USE IN PHOTOLITHOGRAPHY MODELING, IEEE transactions on semiconductor manufacturing, 9(2), 1996, pp. 182-190
One of the outstanding problems of photolithography is the measurement
of development parameters, particularly in one's own manufacturing li
ne, We present an inexpensive practical method for obtaining values of
development parameters for use in photolithography modeling, The meth
od utilizes the actual production equipment used in the fab, as well a
s the computer modeling package for which the development parameters a
re being collected, In addressing experimental geometries with which o
ne may carry out such data collection, we discuss the critical issue o
f standing waves and their impact on measurement accuracy. Two techniq
ues are presented for solving the problem of standing waves and their
extreme impact on the quality of collected data. One involves creating
a photoactive component latent image in which there are no standing w
aves. The other is a means by which development parameters may still b
e obtained for situations such as photolithography of thin film magnet
ic recording heads, where the standing waves may not necessarily be de
convolved from the development process or data collection, Development
parameters using 1.15 mu m of AZ 4110 resist on a NiFe substrate were
measured using the latter technique.