PREDICTION OF WAFER STATE AFTER PLASMA PROCESSING USING REAL-TIME TOOL DATA

Authors
Citation
Sf. Lee et Cj. Spanos, PREDICTION OF WAFER STATE AFTER PLASMA PROCESSING USING REAL-TIME TOOL DATA, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 252-261
Citations number
23
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Physics, Applied
ISSN journal
08946507
Volume
8
Issue
3
Year of publication
1995
Pages
252 - 261
Database
ISI
SICI code
0894-6507(1995)8:3<252:POWSAP>2.0.ZU;2-L
Abstract
Empirical models based on real-time equipment signals are used to pred ict the outcome (e.g., etch rates and uniformity) of each wafer during and after plasma processing. Three regression and one neural network modeling methods were investigated, The models are verified on data co llected several weeks after the initial experiment, demonstrating that the models built with real-time data survive small changes in the mac hine due to normal operation and maintenance, The predictive capabilit y can be used to assess the quality of the wafers after processing, th ereby ensuring that only wafers worth processing continue down the fab rication line, Future applications include real-time evaluation of waf er features and economical run-to-run control.