CONTROL OF SEMICONDUCTOR MANUFACTURING EQUIPMENT - REAL-TIME FEEDBACK-CONTROL OF A REACTIVE ION ETCHER

Citation
Ba. Rashap et al., CONTROL OF SEMICONDUCTOR MANUFACTURING EQUIPMENT - REAL-TIME FEEDBACK-CONTROL OF A REACTIVE ION ETCHER, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 286-297
Citations number
30
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Physics, Applied
ISSN journal
08946507
Volume
8
Issue
3
Year of publication
1995
Pages
286 - 297
Database
ISI
SICI code
0894-6507(1995)8:3<286:COSME->2.0.ZU;2-6
Abstract
This paper describes the development of real-time control technology f or the improvement of manufacturing characteristics of reactive ion et chers, A general control strategy is presented, The principal ideas ar e to sense key plasma parameters, develop a dynamic input-output model for the subsystem connecting the equipment inputs to the key plasma v ariables, and design and implement a multivariable control system to c ontrol these variables, Experimental results show that this approach t o closed-loop control leads to a much more stable etch rate in the pre sence of a variety of disturbances as compared to current industrial p ractice.