RELAXATION OF ACCEPTANCE LIMITS (RAL) - A GLOBAL APPROACH FOR PARAMETRIC YIELD CONTROL OF 0.1-MU-M DEEP-SUBMICRON MOSFET DEVICES

Authors
SITTE R DIMITRIJEV S HARRISON HB
Citation
R. Sitte et al., RELAXATION OF ACCEPTANCE LIMITS (RAL) - A GLOBAL APPROACH FOR PARAMETRIC YIELD CONTROL OF 0.1-MU-M DEEP-SUBMICRON MOSFET DEVICES, IEEE transactions on semiconductor manufacturing, 8(3), 1995, pp. 374-377
Citations number
9
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Physics, Applied
Journal title
IEEE transactions on semiconductor manufacturing → ACNP
ISSN journal
08946507
Volume
8
Issue
3
Year of publication
1995
Pages
374 - 377
Database
ISI
SICI code
0894-6507(1995)8:3<374:ROAL(->2.0.ZU;2-V
Abstract
An alternative method to fixed quality acceptance limits for in-line y ield control is proposed. Our study is based on a sensitivity analysis , which has revealed that conventional parametric yield-control techni ques using fixed in-line acceptance (tolerance) limits, as traditional ly used in semiconductor manufacturing, are not efficient in deep subm icron-size devices.