TRAJECTORY SPLIT METHOD FOR MONTE-CARLO SIMULATION OF ION-IMPLANTATION

Authors
BOHMAYR W BURENKOV A LORENZ J RYSSEL H SELBERHERR S
Citation
W. Bohmayr et al., TRAJECTORY SPLIT METHOD FOR MONTE-CARLO SIMULATION OF ION-IMPLANTATION, IEEE transactions on semiconductor manufacturing, 8(4), 1995, pp. 402-407
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Physics, Applied
Journal title
IEEE transactions on semiconductor manufacturing → ACNP
ISSN journal
08946507
Volume
8
Issue
4
Year of publication
1995
Pages
402 - 407
Database
ISI
SICI code
0894-6507(1995)8:4<402:TSMFMS>2.0.ZU;2-8
Abstract
A new method for the acceleration of two- and three-dimensional Monte Carlo simulation of ion implantation into crystalline targets is prese nted. The trajectory split method ensures a much better statistical re presentation in regions with a dopant concentration several orders of magnitudes smaller than the maximum. As a result, the time required to perform a simulation with comparable statistical accuracy is drastica lly reduced. The advantages of the new approach have been confirmed by a thorough statistical analysis.