A MANUFACTURABLE PROCESS TO IMPROVE THERMAL-STABILITY OF 0.25-MU-M COBALT SILICIDED POLY GATE

A CoSi2 salicidation process using a thin titanium capping layer is de veloped to improve the thermal stability of deep submicron CoSi2/poly stacks. -50 nm CoSi2 was uniformly formed on 0.25-mu m wide poly lines . The electrical results show that the lines formed by a capping proce ss using Ti can withstand higher thermal treatment (-750 degrees C for 30 min) without significant degradation. This work shows that the mod ified CoSi2 process should be considered for 0.25-mu m CMOS applicatio ns.