MANUFACTURING STUDY OF YIELD AND PERFORMANCE DEPENDENCE ON GATE LENGTH FOR SUBMICRON ALLNAS-GAINAS HEMTS

We report on the fabrication, characterization, and statistical analys is of the performance and yield of AlInAs-GaInAs on InP low-noise HEMT 's with subquarter micron T-gates fabricated with electron beam lithog raphy. The study was undertaken to establish the manufacturability of submicron AlInAs-GaInAs HEMT technology for various low-noise microwav e receiver applications. Excellent dc device yield (up to 90%) was obt ained from devices of gate widths between 300 mum and 1000 mum. A rang e of minimum noise figures between of 0.26 to 0.5 dB at 2 GHz and 0.39 to 0.8 dB at 12 GHz were obtained for 0.15 mum and 0.20 mum gate leng th devices. The results establish the correlation between f(T), noise figure, and yield for this new class of microwave devices.