ENHANCEMENT OF RESOLUTION AND LINEARITY-CONTROL OF CONTACT-HOLE RESIST PATTERNS WITH SURFACE-ACTIVE DEVELOPER

Authors
SHIMADA H SHIMOMURA S AU R MIYAWAKI M OHMI T
Citation
H. Shimada et al., ENHANCEMENT OF RESOLUTION AND LINEARITY-CONTROL OF CONTACT-HOLE RESIST PATTERNS WITH SURFACE-ACTIVE DEVELOPER, IEEE transactions on semiconductor manufacturing, 7(3), 1994, pp. 389-393
Citations number
20
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Physics, Applied
Journal title
IEEE transactions on semiconductor manufacturing → ACNP
ISSN journal
08946507
Volume
7
Issue
3
Year of publication
1994
Pages
389 - 393
Database
ISI
SICI code
0894-6507(1994)7:3<389:EORALO>2.0.ZU;2-V
Abstract
The resolution enhancement of contact-hole resist patterns featuring p recise linear correlation between mask size and resist-pattern size by employing a surface-active developer is presented. The addition of su rfactant improves the wettability of the developer, thus enabling the solution to penetrate narrow spaces. The optimum surfactant concentrat ion in developer leads to superior resist performance. This technology for contact-hole patterning results in high resolution, high sensitiv ity, and a wide process margin for ULSI manufacturing.