TEMPERATURE-DEPENDENT EMISSIVITY OF SILICON-RELATED MATERIALS AND STRUCTURES

The results of an ongoing collaborative project between the New Jersey Institute of Technology (NJIT) and SEMATECH on the temperature-depend ent emissivity of silicon-related materials and structures are present ed in this study, These results have been acquired using a spectral em issometer. This emissometer consists of a Fourier Transform Infra-Red (FTIR) spectrometer designed specifically to facilitate simultaneous m easurements of surface spectral emittance and temperature by using opt ical techniques over the near-and mid-IR spectral range and temperatur es ranging from 300 Ii to 2000 Ii, This noncontact, real-time techniqu e has been used to measure radiative properties as a function of tempe rature and wavelength for a wide range of silicon-related materials an d structures, The first results of the temperature and wavelength depe ndent emissivity and hence refractive index of silicon nitride, in the Literature, is presented in this study.