A DC METHOD FOR MEASURING ALL THE GATE CAPACITORS IN MOS DEVICES WITHATTO-FARAD RESOLUTION

In this paper we present a new methodology for measuring all the intri nsic gate capacitors (i.e., gate-source, gate-drain, and gate-bulk) in a MOS device using a de measure ment scheme, The structure consists o f two matched MOSFET's, one of which has a reference capacitor attache d to its gate, The test structure was fabricated and the results show a resolution in the atto-farads range, The test structures uses charge coupling to measure the gate capacitors.