EQUIVALENT CIRCULAR DEFECT MODEL OF REAL DEFECT OUTLINES IN THE IC MANUFACTURING PROCESS

Authors
Citation
Xh. Jiang et al., EQUIVALENT CIRCULAR DEFECT MODEL OF REAL DEFECT OUTLINES IN THE IC MANUFACTURING PROCESS, IEEE transactions on semiconductor manufacturing, 11(3), 1998, pp. 432-441
Citations number
11
Categorie Soggetti
Engineering, Eletrical & Electronic","Engineering, Manufacturing","Physics, Applied
ISSN journal
08946507
Volume
11
Issue
3
Year of publication
1998
Pages
432 - 441
Database
ISI
SICI code
0894-6507(1998)11:3<432:ECDMOR>2.0.ZU;2-6
Abstract
For efficient yield prediction and inductive fault analysis of integra ted circuits (IC's), it is usually assumed that defects related to pho tolithography have the shape of circular discs or squares. Real defect s, however, exhibit a great variety of shapes. This paper presents an accurate model to characterize those real defects. The defect outline is used in this model to determine an equivalent circular defect such that the probability that the circular defect causes a fault is the sa me as the probability that the real defect causes a fault, so a norm i s available which can be used to determine the accuracy of a defect mo del, and thus estimate approximately the error that will be aroused in the prediction of fault probability of a pattern by using circular de fect model, Finally, the new model is illustrated with the real defect outlines obtained by optical inspection.