Xh. Jiang et al., EQUIVALENT CIRCULAR DEFECT MODEL OF REAL DEFECT OUTLINES IN THE IC MANUFACTURING PROCESS, IEEE transactions on semiconductor manufacturing, 11(3), 1998, pp. 432-441
For efficient yield prediction and inductive fault analysis of integra
ted circuits (IC's), it is usually assumed that defects related to pho
tolithography have the shape of circular discs or squares. Real defect
s, however, exhibit a great variety of shapes. This paper presents an
accurate model to characterize those real defects. The defect outline
is used in this model to determine an equivalent circular defect such
that the probability that the circular defect causes a fault is the sa
me as the probability that the real defect causes a fault, so a norm i
s available which can be used to determine the accuracy of a defect mo
del, and thus estimate approximately the error that will be aroused in
the prediction of fault probability of a pattern by using circular de
fect model, Finally, the new model is illustrated with the real defect
outlines obtained by optical inspection.