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Results: 76-100/2122
Authors:
SMY T
TAN L
CHAN K
TAIT RN
BROUGHTON JN
DEW SK
BRETT MJ
Citation: T. Smy et al., A SIMULATION STUDY OF LONG THROW SPUTTERING FOR DIFFUSION BARRIER DEPOSITION INTO HIGH ASPECT VIAS AND CONTACTS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1414-1425
Authors:
ACHARYA YB
VYAVAHARE PD
Citation: Yb. Acharya et Pd. Vyavahare, REMODELING LIGHT-EMITTING DIODE IN LOW CURRENT REGION, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1426-1430
Authors:
CHEN CJ
CHOI KK
CHANG WH
TSUI DC
Citation: Cj. Chen et al., CORRUGATED QUANTUM-WELL INFRARED PHOTODETECTORS WITH POLYIMIDE PLANARIZATION FOR DETECTOR ARRAY APPLICATIONS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1431-1437
Authors:
STIEBIG H
KNIPP D
ZIMMER J
WAGNER H
Citation: H. Stiebig et al., TRANSIENT-BEHAVIOR OF OPTIMIZED NIPIIN 3-COLOR DETECTORS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1438-1444
Authors:
OKADA H
CHEN JM
BOS PJ
Citation: H. Okada et al., POSSIBILITY OF STEREOSCOPIC DISPLAYS BY USING A VIEWING ANGLE DEPENDENCE OF TWISTED NEMATIC LIQUID-CRYSTAL CELLS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1445-1452
Authors:
TOSAKA Y
SATOH S
ITAKURA T
EHARA H
UEDA T
WOFFINDEN GA
WENDER SA
Citation: Y. Tosaka et al., MEASUREMENT AND ANALYSIS OF NEUTRON-INDUCED SOFT ERRORS IN SUB-HALF-MICRON CMOS CIRCUITS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1453-1458
Authors:
WONG SC
HSU SY
WANG YH
HOUNG MP
CHO SK
Citation: Sc. Wong et al., A DC MODEL FOR ASYMMETRIC TRAPEZOIDAL GATE MOSFET IN STRONG INVERSION, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1459-1467
Authors:
PERUGUPALLI P
TRIVEDI M
SHENAI K
LEONG SK
Citation: P. Perugupalli et al., MODELING AND CHARACTERIZATION OF AN 80 V SILICON LDMOSFET FOR EMERGING RFIC APPLICATIONS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1468-1478
Authors:
MAEDA S
YAMAGUCHI Y
KIM IJ
IWAMATSU T
IPPOSHI T
MIYAMOTO S
MAEGAWA S
UEDA K
NII K
MASHIKO K
INOUE Y
NISHIMURA T
MIYOSHI H
Citation: S. Maeda et al., ANALYSIS OF DELAY-TIME INSTABILITY ACCORDING TO THE OPERATING FREQUENCY IN-FIELD SHIELD ISOLATED SOI CIRCUITS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1479-1486
Authors:
HARELAND SA
MANASSIAN M
SHIH WK
JALLEPALLI S
WANG HH
CHINDALORE GL
TASCH AF
MAZIAR CM
Citation: Sa. Hareland et al., COMPUTATIONALLY EFFICIENT MODELS FOR QUANTIZATION EFFECTS IN MOS ELECTRON AND HOLE ACCUMULATION LAYERS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1487-1493
Authors:
DASGUPTA N
DASGUPTA A
Citation: N. Dasgupta et A. Dasgupta, A NEW SPICE MOSFET LEVEL 3-LIKE MODEL OF HEMTS FOR CIRCUIT SIMULATION, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1494-1500
MODELING OF SMALL-SIGNAL MINORITY-CARRIER TRANSPORT IN BIPOLAR-DEVICES AT ARBITRARY INJECTION LEVELS
Authors:
RINALDI NF
Citation: Nf. Rinaldi, MODELING OF SMALL-SIGNAL MINORITY-CARRIER TRANSPORT IN BIPOLAR-DEVICES AT ARBITRARY INJECTION LEVELS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1501-1510
Authors:
WANG TH
CHANG TE
CHIANG LP
WANG CH
ZOUS NK
HUANG CM
Citation: Th. Wang et al., INVESTIGATION OF OXIDE CHARGE TRAPPING AND DETRAPPING IN A MOSFET BY USING A GIDL CURRENT TECHNIQUE, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1511-1517
Authors:
GUO JC
LIU YC
CHOU MH
WANG MT
SHONE F
Citation: Jc. Guo et al., A 3-TERMINAL BAND-TRAP-BAND TUNNELING MODEL FOR DRAIN ENGINEERING ANDSUBSTRATE BIAS EFFECT ON GIDL IN MOSFET, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1518-1523
Authors:
CHEN C
LIU ZZ
MA TP
Citation: C. Chen et al., ANALYSIS OF ENHANCED HOT-CARRIER EFFECTS IN SCALED FLASH MEMORY DEVICES, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1524-1530
Authors:
LOMBARDO SA
PRIVITERA V
PINTO A
WARD P
LAROSA G
CAMPISANO SU
Citation: Sa. Lombardo et al., BAND-GAP NARROWING AND HIGH-FREQUENCY CHARACTERISTICS OF SI GEXSI1-X HETEROJUNCTION BIPOLAR-TRANSISTORS FORMED BY GE ION-IMPLANTATION IN SI/, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1531-1537
Authors:
LIU SS
JANG SL
CHYAU CG
Citation: Ss. Liu et al., COMPACT LDD NMOSFET DEGRADATION MODEL, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1538-1547
Authors:
SLADE HC
SHUR MS
Citation: Hc. Slade et Ms. Shur, ANALYSIS OF BIAS STRESS ON UNPASSIVATED HYDROGENATED AMORPHOUS-SILICON THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1548-1553
Authors:
RICCO B
GOZZI G
LANZONI M
Citation: B. Ricco et al., MODELING AND SIMULATION OF STRESS-INDUCED LEAKAGE CURRENT IN ULTRATHIN SIO2-FILMS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1554-1560
Authors:
GRINBERG AA
LURYI S
Citation: Aa. Grinberg et S. Luryi, ON ELECTRON-TRANSPORT ACROSS INTERFACES CONNECTING MATERIALS WITH DIFFERENT EFFECTIVE MASSES, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1561-1568
Authors:
KELLER S
SPIEGEL M
FATH P
WILLEKE GP
BUCHER E
Citation: S. Keller et al., A CRITICAL-EVALUATION OF THE EFFECTIVE DIFFUSION LENGTH DETERMINATIONIN CRYSTALLINE SILICON SOLAR-CELLS FROM AN EXTENDED SPECTRAL-ANALYSIS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1569-1574
Authors:
GARTNER M
VIETZKE D
REZNIK D
STOISIEK M
OPPERMANN KG
GERLACH W
Citation: M. Gartner et al., BISTABILITY AND HYSTERESIS IN THE CHARACTERISTICS OF SEGMENTED-ANODE LATERAL IGBTS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1575-1579
Authors:
CHAN WWT
SIN JKO
WONG SS
Citation: Wwt. Chan et al., A NOVEL CROSSTALK ISOLATION STRUCTURE FOR BULK CMOS POWER ICS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1580-1586
Authors:
GRAMSCH E
Citation: E. Gramsch, NOISE CHARACTERISTICS OF AVALANCHE PHOTODIODE ARRAYS OF THE BEVEL-EDGE TYPE, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1587-1594
Authors:
SCHOEN KJ
WOODALL JM
COOPER JA
MELLOCH MR
Citation: Kj. Schoen et al., DESIGN CONSIDERATIONS AND EXPERIMENTAL-ANALYSIS OF HIGH-VOLTAGE SIC SCHOTTKY-BARRIER RECTIFIERS, I.E.E.E. transactions on electron devices, 45(7), 1998, pp. 1595-1604