AAAAAA
Results: 126-150/1514
Authors:
KURIYAMA K
USHIYAMA K
TSUNODA T
UCHIDA M
YOKOYAMA K
Citation: K. Kuriyama et al., UNIFORMITY OF DEEP LEVELS IN SEMIINSULATING INP OBTAINED BY MULTIPLE-STEP WAFER ANNEALING, Journal of electronic materials, 27(5), 1998, pp. 462-465
Authors:
KIM JH
SEONG TY
MASON NJ
WALKER PJ
Citation: Jh. Kim et al., MORPHOLOGY AND DEFECT STRUCTURES OF GASB ISLANDS ON GAAS GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(5), 1998, pp. 466-471
ANTISITE ARSENIC INCORPORATION IN THE LOW-TEMPERATURE MBE OF GALLIUM-ARSENIDE - PHYSICS AND MODELING
Authors:
MUTHUVENKATRAMAN S
GORANTLA S
VENKAT R
DORSEY DL
Citation: S. Muthuvenkatraman et al., ANTISITE ARSENIC INCORPORATION IN THE LOW-TEMPERATURE MBE OF GALLIUM-ARSENIDE - PHYSICS AND MODELING, Journal of electronic materials, 27(5), 1998, pp. 472-478
Authors:
DOCTER DP
IBBETSON JP
GAO Y
MISHRA UK
LIU T
GRIDER DE
Citation: Dp. Docter et al., ANALYSIS OF V III INCORPORATION IN NONSTOICHIOMETRIC GAAS AND INP FILMS USING SIMS/, Journal of electronic materials, 27(5), 1998, pp. 479-483
Authors:
MALIKOVA L
POLLAK FH
BHAT R
Citation: L. Malikova et al., COMPOSITION AND TEMPERATURE-DEPENDENCE OF THE DIRECT-BAND-GAP OF S-THAN-OR-EQUAL-TO-X-LESS-THAN-OR-EQUAL-TO-0.0232) USING CONTACTLESS ELECTROREFLECTANCE, Journal of electronic materials, 27(5), 1998, pp. 484-487
Authors:
KIM HS
KO DH
BAE DL
LEE NI
KIM DW
KANG HK
LEE MY
Citation: Hs. Kim et al., GATE OXIDE RELIABILITIES IN MOS (METAL-OXIDE-SEMICONDUCTOR) STRUCTURES WITH TI-POLYCIDE GATES, Journal of electronic materials, 27(4), 1998, pp. 21-25
Authors:
ADESIDA I
GASKILL DK
MELLOCH MR
SPENCER M
Citation: I. Adesida et al., SPECIAL ISSUE PAPERS ON III-V NITRIDES AND SILICON-CARBIDE - FOREWORD, Journal of electronic materials, 27(4), 1998, pp. 159-159
Authors:
NAKAMURA S
Citation: S. Nakamura, MATERIALS ISSUES FOR INGAN-BASED LASERS, Journal of electronic materials, 27(4), 1998, pp. 160-165
Authors:
CHO H
VARTULI CB
DONOVAN SM
MACKENZIE JD
ABERNATHY CR
PEARTON SJ
SHUL RJ
CONSTANTINE C
Citation: H. Cho et al., LOW-BIAS DRY-ETCHING OF III-NITRIDES IN CL-2-BASED INDUCTIVELY-COUPLED PLASMAS, Journal of electronic materials, 27(4), 1998, pp. 166-170
Authors:
TSEN KT
FERRY DK
BOTCHKAREV A
SVERDLOV B
SALVADOR A
MORKOC H
Citation: Kt. Tsen et al., NONEQUILIBRIUM ELECTRON DISTRIBUTIONS AND ELECTRON-LONGITUDINAL OPTICAL PHONON-SCATTERING RATES IN WURTZITE GAN, Journal of electronic materials, 27(4), 1998, pp. 171-174
Authors:
REN F
PEARTON SJ
SHUL RJ
HAN J
Citation: F. Ren et al., IMPROVED SIDEWALL MORPHOLOGY ON DRY-ETCHED SIO2 MASKED GAN FEATURES, Journal of electronic materials, 27(4), 1998, pp. 175-178
Authors:
ZOLPER JC
HAN J
BIEFELD RM
VANDEUSEN SB
WAMPLER WR
REIGER DJ
PEARTON SJ
WILLIAMS JS
TAN HH
KARLICEK RF
STALL RA
Citation: Jc. Zolper et al., SI-IMPLANTATION ACTIVATION ANNEALING OF GAN UP TO 1400-DEGREES-C, Journal of electronic materials, 27(4), 1998, pp. 179-184
Authors:
LEE H
HARRIS JS
Citation: H. Lee et Js. Harris, IRON NITRIDE MASK AND REACTIVE ION ETCHING OF GAN FILMS, Journal of electronic materials, 27(4), 1998, pp. 185-189
Authors:
NG TB
HAN J
BIEFELD RM
WECKWERTH MV
Citation: Tb. Ng et al., IN-SITU REFLECTANCE MONITORING DURING MOCVD OF ALGAN, Journal of electronic materials, 27(4), 1998, pp. 190-195
Authors:
LUTHER BP
MOHNEY SE
DELUCCA JM
KARLICEK RF
Citation: Bp. Luther et al., STUDY OF CONTACT RESISTIVITY, MECHANICAL INTEGRITY, AND THERMAL-STABILITY OF TI AL AND TA/AL OHMIC CONTACTS TO N-TYPE GAN/, Journal of electronic materials, 27(4), 1998, pp. 196-199
Authors:
MARUYAMA T
MIYAJIMA Y
HATA K
CHO SH
AKIMOTO K
OKUMURA H
YOSHIDA S
KATO H
Citation: T. Maruyama et al., ELECTRONIC-STRUCTURE OF WURTZITE-GAN AND ZINC BLENDE-GAN STUDIED BY ANGLE-RESOLVED PHOTOEMISSION, Journal of electronic materials, 27(4), 1998, pp. 200-205
Authors:
EITING CJ
GRUDOWSKI PA
DUPUIS RD
Citation: Cj. Eiting et al., P-TYPE AND N-TYPE DOPING OF GAN AND ALGAN EPITAXIAL LAYERS GROWN BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION, Journal of electronic materials, 27(4), 1998, pp. 206-209
Authors:
AHOUJJA M
MITCHEL WC
ELHAMRI S
NEWROCK RS
MAST DB
REDWING JM
TISCHLER MA
FLYNN JS
Citation: M. Ahoujja et al., TRANSPORT-COEFFICIENTS OF ALGAN GAN HETEROSTRUCTURES/, Journal of electronic materials, 27(4), 1998, pp. 210-214
Authors:
SUDHIR GS
FUJII H
WONG WS
KISIELOWSKI C
NEWMAN N
DIEKER C
LILIENTALWEBER Z
RUBIN MD
WEBER ER
Citation: Gs. Sudhir et al., CONTROL OF THE STRUCTURE AND SURFACE-MORPHOLOGY OF GALLIUM NITRIDE AND ALUMINUM NITRIDE THIN-FILMS BY NITROGEN BACKGROUND PRESSURE IN PULSED-LASER DEPOSITION, Journal of electronic materials, 27(4), 1998, pp. 215-221
Authors:
YABLONSKII GP
GURSKII AL
LUTSENKO EV
MARKO IP
SCHINELLER B
GUTTZEIT A
SCHON O
HEUKEN M
HEIME K
BECCARD R
SCHMITZ D
JUERGENSEN H
Citation: Gp. Yablonskii et al., OPTICAL-PROPERTIES AND RECOMBINATION MECHANISMS IN GAN AND GAN-MG GROWN BY METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 222-228
Authors:
BREMSER MD
PERRY WG
NAM OH
GRIFFIS DP
LOESING R
RICKS DA
DAVIS RF
Citation: Md. Bremser et al., ACCEPTOR AND DONOR DOPING OF ALXGA1-XN THIN-FILM ALLOYS GROWN ON 6H-SIC(0001) SUBSTRATES VIA METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 229-232
Authors:
NAM OH
ZHELEVA TS
BREMSER MD
DAVIS RF
Citation: Oh. Nam et al., LATERAL EPITAXIAL OVERGROWTH OF GAN FILMS ON SIO2 AREAS VIA METALORGANIC VAPOR-PHASE EPITAXY, Journal of electronic materials, 27(4), 1998, pp. 233-237
Authors:
HANSER AD
WOLDEN CA
PERRY WG
ZHELEVA T
CARLSON EP
BANKS AD
THERRIEN RJ
DAVIS RF
Citation: Ad. Hanser et al., ANALYSIS OF REACTOR GEOMETRY AND DILUENT GAS-FLOW EFFECTS ON THE METALORGANIC VAPOR-PHASE EPITAXY OF ALN AND GAN THIN-FILMS ON ALPHA(6H)-SIC SUBSTRATES, Journal of electronic materials, 27(4), 1998, pp. 238-245
Authors:
KIM S
RHEE SJ
LI X
COLEMAN JJ
BISHOP SG
KLEIN PB
Citation: S. Kim et al., EXCITATION MECHANISMS OF MULTIPLE ER3-IMPLANTED GAN( SITES IN ER), Journal of electronic materials, 27(4), 1998, pp. 246-254
Authors:
SCHMITZ AC
PING AT
KHAN MA
CHEN Q
YANG JW
ADESIDA I
Citation: Ac. Schmitz et al., METAL CONTACTS TO N-TYPE GAN, Journal of electronic materials, 27(4), 1998, pp. 255-260