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Results: 76-100/683
Authors:
MASSON L
ALBERTINI D
THIBAUDAU F
SALVAN F
Citation: L. Masson et al., SI(111)-(7X7) UNDER SILANE UHV-LPCVD - A STM STUDY, Surface review and letters, 5(1), 1998, pp. 55-61
Authors:
HE Y
YU LM
THIRY PA
CAUDANO R
Citation: Y. He et al., NEGATIVE-ION RESONANCE EVIDENCED BY VIBRATIONALLY RESOLVED ELECTRON-DIFFRACTION ON THE H SI(111) SURFACE/, Surface review and letters, 5(1), 1998, pp. 63-67
Authors:
NETZER FP
VITALI L
KRAFT J
RAMSEY MG
Citation: Fp. Netzer et al., SURFACE-STRUCTURES OF PHOSPHORUS AND INDIUM ON SI(111), Surface review and letters, 5(1), 1998, pp. 69-76
Authors:
KO YJ
CHANG KJ
YI JY
PARK SJ
LEE EH
Citation: Yj. Ko et al., FIRST-PRINCIPLES STUDY OF THE AS-MEDIATED GROWTHS OF SI AND GE ON SI(100), Surface review and letters, 5(1), 1998, pp. 77-80
Authors:
KUSUNOKI I
ISHIDZUKA S
IGARI Y
TAKAOKA T
Citation: I. Kusunoki et al., COMPARISON BETWEEN THE REACTION-MECHANISMS OF NITRIDATION OF SI(100) BY A NH3 MOLECULAR-BEAM AND BY A N-2(-BEAM() ION), Surface review and letters, 5(1), 1998, pp. 81-84
Authors:
PAPAGEORGOPOULOS A
MOSBY D
PAPAGEORGOPOULOS CA
Citation: A. Papageorgopoulos et al., THE BEHAVIOR OF CS ON S-COVERED SI(100)-(2 X-1) AND SI(100)-(1 X-1) SURFACES, Surface review and letters, 5(1), 1998, pp. 85-89
Authors:
BENEMANSKAYA GV
DAINEKA DV
FRANKKAMENETSKAYA GE
Citation: Gv. Benemanskaya et al., ELECTRONIC-STRUCTURE OF THE ULTRATHIN CS SI(100)-(2X1) AND CS/SI(111)-(7X7) INTERFACES IN THE THRESHOLD ENERGY REGION/, Surface review and letters, 5(1), 1998, pp. 91-95
Authors:
JENKINS SJ
SRIVASTAVA GP
Citation: Sj. Jenkins et Gp. Srivastava, ATOMIC-STRUCTURE OF A MONOLAYER OF GE ON SI(001)(2 X-1), Surface review and letters, 5(1), 1998, pp. 97-100
Authors:
PI TW
HONG LH
WU RT
CHENG CP
KO MH
Citation: Tw. Pi et al., PHOTOEMISSION-STUDY OF K DOPING ON A MONOLAYER OF C-60 ON CLEAN SI(001)-(2X1) SURFACE, Surface review and letters, 5(1), 1998, pp. 101-104
Authors:
WURDE K
KRUGER P
MAZUR A
POLLMANN J
Citation: K. Wurde et al., FIRST-PRINCIPLES INVESTIGATIONS OF THE ATOMIC AND ELECTRONIC-STRUCTURE OF PB, SN AND GE ADSORBED ON THE GE(111)-(ROOT-3-X-ROOT-3) SURFACE, Surface review and letters, 5(1), 1998, pp. 105-110
Authors:
SEEHOFER L
FALKENBENG G
JOHNSON RL
Citation: L. Seehofer et al., CHARGE-TRANSFER AND SURFACE-DIFFUSION OF LEAD ON GE(111), Surface review and letters, 5(1), 1998, pp. 111-117
Authors:
GOTHELID M
LELAY G
WIGREN C
BJORKQVIST M
KARLSSON UO
Citation: M. Gothelid et al., HALOGEN INTERACTION WITH THE GE(111) AND GE(100) SURFACES, Surface review and letters, 5(1), 1998, pp. 119-124
Authors:
KHRAMTSOVA EA
GOLEK F
BAUER E
Citation: Ea. Khramtsova et al., GROWTH OF ALUMINUM ON SILICON - COMPARISON OF THE SI(111)7X7 AND SI(111)DELTA-7X7-D SURFACES, Surface review and letters, 5(1), 1998, pp. 125-131
Authors:
BERBEZIER I
GALLAS B
DERRIEN J
Citation: I. Berbezier et al., ELASTIC STRAIN RELAXATION IN SI1-XGEX LAYERS EPITAXIALLY GROWN ON SI SUBSTRATES, Surface review and letters, 5(1), 1998, pp. 133-138
Authors:
STARKE U
SCHARDT J
WEISS W
RANGELOV G
FAUSTER T
HEINZ K
Citation: U. Starke et al., STRUCTURE OF EPITAXIAL COSI2 FILMS ON SI(111) STUDIED WITH LOW-ENERGY-ELECTRON DIFFRACTION (LEED), Surface review and letters, 5(1), 1998, pp. 139-144
Authors:
FALTA J
BAHR D
MATERLIK G
MULLER BH
HORNVONHOEGEN M
Citation: J. Falta et al., X-RAY CHARACTERIZATION OF BURIED DELTA-LAYER, Surface review and letters, 5(1), 1998, pp. 145-149
Authors:
WESTPHAL C
SOKELAND F
DREINER S
ZACHARIAS H
Citation: C. Westphal et al., EPITAXIAL-GROWTH OF SB GE/SI(111) STUDIED BY PHOTOELECTRON DIFFRACTION/, Surface review and letters, 5(1), 1998, pp. 151-155
Authors:
GUNNELLA R
CASTRUCCI P
PINTO N
CUCCULELLI P
DAVOLI I
SEBILLEAU D
DECRESCENZI M
Citation: R. Gunnella et al., SURFACTANT-MEDIATED GROWTH OF GE SI(001) INTERFACE STUDIED BY XPD/, Surface review and letters, 5(1), 1998, pp. 157-161
Authors:
HOWES PB
EDWARDS KA
MACDONALD JE
HIBMA T
BOOTSMA T
JAMES MA
NICKLIN CL
Citation: Pb. Howes et al., THE ATOMIC-STRUCTURE OF THE SI(111)-PB BURIED INTERFACE GROWN ON THE SI(111)-(ROOT-3-X-ROOT-3)-PB RECONSTRUCTION, Surface review and letters, 5(1), 1998, pp. 163-166
Authors:
LUCOVSKY G
NIIMI H
KOH K
GREEN ML
Citation: G. Lucovsky et al., MONOLAYER NITROGEN ATOM INCORPORATION AT BURIED SI-SIO2 INTERFACES - PREPARATION BY REMOTE PLASMA OXIDATION NITRIDATION AND CHARACTERIZATION BY ONLINE AUGER-ELECTRON SPECTROSCOPY/, Surface review and letters, 5(1), 1998, pp. 167-173
Authors:
GAI Z
GAO B
JI H
ZHAO RG
YANG WS
Citation: Z. Gai et al., ATOMIC-STRUCTURE OF THE DOMAIN-WALLS OF THE DISCOMMENSURATE PHASES INGE(111) GA/, Surface review and letters, 5(1), 1998, pp. 175-179
Authors:
SCHARDT J
BERNHARDT J
STARKE U
HEINZ K
Citation: J. Schardt et al., ATOMIC-STRUCTURE OF HEXAGONAL 6H-SIC AND 3C-SIC SURFACES, Surface review and letters, 5(1), 1998, pp. 181-186
Authors:
GUNNELLA R
VEUILLEN JY
BERTHET A
TAN TAN
Citation: R. Gunnella et al., ELECTRONIC AND STRUCTURAL-PROPERTIES OF THE 6H-SIC(0001) SURFACES, Surface review and letters, 5(1), 1998, pp. 187-191
Authors:
FORBEAUX I
THEMLIN JM
LANGLAIS V
YU LM
BELKHIR H
DEBEVER JM
Citation: I. Forbeaux et al., THE (ROOT-3-X-ROOT-3)R30-DEGREES-RECONSTRUCTED 6H-SIC(0001) - A SEMICONDUCTING SURFACE, Surface review and letters, 5(1), 1998, pp. 193-197
Authors:
SABISCH M
KRUGER P
MAZUR A
POLLMANN J
Citation: M. Sabisch et al., STRUCTURE OF 6H-SIC(0001) SURFACES FROM AB-INITIO CALCULATIONS, Surface review and letters, 5(1), 1998, pp. 199-205