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Results: 1-25/9650
Authors:
Yin, LW
Li, MS
Cui, HJ
Zou, ZD
Liu, P
Hao, ZY
Citation: Lw. Yin et al., Diamond formation using Fe3C as a carbon source at high temperature and high pressure, J CRYST GR, 234(1), 2002, pp. 1-4
Authors:
Yamaoka, S
Kumar, MDS
Kanda, H
Akaishi, M
Citation: S. Yamaoka et al., Crystallization of diamond from CO2 fluid at high pressure and high temperature, J CRYST GR, 234(1), 2002, pp. 5-8
Authors:
Cao, YG
Chen, H
Li, JT
Ge, CC
Tang, SY
Tang, JX
Chen, X
Citation: Yg. Cao et al., Formation of alpha-Si3N4 whiskers with addition of NaN3 as catalyst, J CRYST GR, 234(1), 2002, pp. 9-11
Authors:
Voloshin, AE
Nishinaga, T
Ge, P
Huo, C
Citation: Ae. Voloshin et al., Te distribution in space grown GaSb, J CRYST GR, 234(1), 2002, pp. 12-24
Authors:
Li, ZQ
Bang, HJ
Piao, GX
Sawahata, J
Akimoto, K
Kinoshita, H
Watanabe, K
Citation: Zq. Li et al., Substrate roughness dependence of structural and optical properties of Eu-doped GaN grown by gas source molecular beam epitaxy, J CRYST GR, 234(1), 2002, pp. 25-31
Authors:
Li, MW
Li, YR
Imaishi, N
Tsukada, T
Citation: Mw. Li et al., Global simulation of a silicon Czochralski furnace, J CRYST GR, 234(1), 2002, pp. 32-46
Authors:
Gunzburger, M
Ozugurlu, E
Turner, J
Zhang, H
Citation: M. Gunzburger et al., Controlling transport phenomena in the Czochralski crystal growth process, J CRYST GR, 234(1), 2002, pp. 47-62
Authors:
Chaussende, D
Ferro, G
Monteil, Y
Citation: D. Chaussende et al., Vapour-liquid-solid mechanism for the growth of SiC homoepitaxial layers by VPE, J CRYST GR, 234(1), 2002, pp. 63-69
Authors:
Ahn, SH
Lee, SH
Nahm, KS
Suh, EK
Hong, MH
Citation: Sh. Ahn et al., Catalytic growth of high quality GaN micro-crystals, J CRYST GR, 234(1), 2002, pp. 70-76
Authors:
Yuan, HR
Lu, DC
Liu, XL
Chen, Z
Han, P
Wang, XH
Wang, D
Citation: Hr. Yuan et al., Statistical investigation on morphology development of gallium nitride in initial growth stage, J CRYST GR, 234(1), 2002, pp. 77-84
Authors:
Gao, YZ
Kan, H
Gao, FS
Gong, XY
Yamaguchi, T
Citation: Yz. Gao et al., Improved purity of long-wavelength InAsSb epilayers grown by melt epitaxy in fused silica boats, J CRYST GR, 234(1), 2002, pp. 85-90
Authors:
Dold, P
Szofran, FR
Benza, KW
Citation: P. Dold et al., Detached growth of gallium doped germanium, J CRYST GR, 234(1), 2002, pp. 91-98
Authors:
Lu, LW
Fong, WK
Zhu, CF
Leung, BH
Surya, C
Wang, J
Ge, WK
Citation: Lw. Lu et al., Study of GaN thin films grown on intermediate-temperature buffer layers bymolecular beam epitaxy, J CRYST GR, 234(1), 2002, pp. 99-104
Authors:
Kim, JS
Yu, PW
Leem, JY
Lee, JI
Noh, SK
Kim, JS
Kim, GH
Kang, SK
Ban, SI
Kim, SG
Jang, YD
Lee, UH
Yim, JS
Lee, D
Citation: Js. Kim et al., Growth of Si-doped InAs quantum dots and annealing effects on size distribution, J CRYST GR, 234(1), 2002, pp. 105-109
Authors:
Kim, GH
Choi, JB
Leem, JY
Lee, JI
Noh, SK
Kim, JS
Kim, JS
Kang, SK
Ban, SI
Citation: Gh. Kim et al., Optical properties of InAs epilayers grown on GaAs by molecular beam epitaxy, J CRYST GR, 234(1), 2002, pp. 110-114
Authors:
Yuan, HR
Chen, Z
Lu, DC
Liu, XL
Han, PD
Wang, XH
Citation: Hr. Yuan et al., A geometrical model of GaN morphology in initial growth stage, J CRYST GR, 234(1), 2002, pp. 115-120
Authors:
Yamasuea, E
Susa, M
Fukuyama, H
Nagata, K
Citation: E. Yamasuea et al., Thermal conductivities of silicon and germanium in solid and liquid statesmeasured by non-stationary hot wire method with silica coated probe, J CRYST GR, 234(1), 2002, pp. 121-131
Authors:
Johansson, J
Seifert, W
Citation: J. Johansson et W. Seifert, Kinetics of self-assembled island formation: Part I - Island density, J CRYST GR, 234(1), 2002, pp. 132-138
Authors:
Johansson, J
Seifert, W
Citation: J. Johansson et W. Seifert, Kinetics of self-assembled island formation: Part II - Island size, J CRYST GR, 234(1), 2002, pp. 139-144
Authors:
Lu, DC
Duan, SK
Citation: Dc. Lu et Sk. Duan, Quasi-thermo dynamic analysis of MOVPE growth of GaxAlyIn1-x-yN, J CRYST GR, 234(1), 2002, pp. 145-152
Authors:
Kita, K
Wen, CJ
Otomo, J
Yamada, K
Komiyama, H
Takahashi, H
Citation: K. Kita et al., Study on the lateral growth of silicon films from metal solutions with temperature gradient, J CRYST GR, 234(1), 2002, pp. 153-158
Authors:
Arulchakkaravarthi, A
Jayavel, P
Santhanaraghavan, P
Ramasamy, P
Citation: A. Arulchakkaravarthi et al., Growth of organic molecular single crystal trans-stilbene by selective self seeding from vertical Bridgman technique, J CRYST GR, 234(1), 2002, pp. 159-163
Authors:
Dariel, MP
Dashevsky, Z
Jarashnely, A
Shusterman, S
Horowitz, A
Citation: Mp. Dariel et al., Carrier concentration gradient generated in p-type PbTe crystals by unidirectional solidification, J CRYST GR, 234(1), 2002, pp. 164-170
Authors:
Wang, YW
Zhang, LD
Wang, GZ
Peng, XS
Chu, ZQ
Liang, CH
Citation: Yw. Wang et al., Catalytic growth of semiconducting zinc oxide nanowires and their photoluminescence properties, J CRYST GR, 234(1), 2002, pp. 171-175
Authors:
Lin, SP
Fung, KZ
Hon, YM
Hon, MH
Citation: Sp. Lin et al., Crystallization kinetics and mechanism of the LixNi2-xO2 (0 < x <= 1) fromLi2CO3 and NiO, J CRYST GR, 234(1), 2002, pp. 176-183