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Results: 1-25/34
Authors:
KIM H
DESJARDINS P
ABELSON JR
GREENE JE
Citation: H. Kim et al., PATHWAYS FOR HYDROGEN DESORPTION FROM SI1-XGEX(001) DURING GAS-SOURCEMOLECULAR-BEAM EPITAXY AND ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION, Physical review. B, Condensed matter, 58(8), 1998, pp. 4803-4808
Authors:
KWON D
LEE H
COHEN JD
JIN HC
ABELSON JR
Citation: D. Kwon et al., OPTICAL-SPECTRA OF CRYSTALLINE SILICON PARTICLES EMBEDDED IN AN AMORPHOUS-SILICON MATRIX, Journal of non-crystalline solids, 230, 1998, pp. 1040-1044
Authors:
JACKSON WB
FRANZ AJ
JIN HC
ABELSON JR
GLAND JL
Citation: Wb. Jackson et al., DETERMINATION OF THE HYDROGEN DENSITY-OF-STATES IN AMORPHOUS HYDROGENATED SILICON, Journal of non-crystalline solids, 230, 1998, pp. 143-147
Authors:
VONKEUDELL A
ABELSON JR
Citation: A. Vonkeudell et Jr. Abelson, THE INTERACTION OF ATOMIC-HYDROGEN WITH VERY THIN AMORPHOUS HYDROGENATED SILICON FILMS ANALYZED USING IN-SITU REAL-TIME INFRARED-SPECTROSCOPY - REACTION-RATES AND THE FORMATION OF HYDROGEN PLATELETS, Journal of applied physics, 84(1), 1998, pp. 489-495
Authors:
WEBER C
ABELSON JR
Citation: C. Weber et Jr. Abelson, AMORPHOUS-SILICON BURIED-CHANNEL THIN-FILM TRANSISTORS, I.E.E.E. transactions on electron devices, 45(2), 1998, pp. 447-452
Authors:
GIBSON JM
TREACY MMJ
VOYLES PM
JIN HC
ABELSON JR
Citation: Jm. Gibson et al., STRUCTURAL DISORDER-INDUCED IN HYDROGENATED AMORPHOUS-SILICON BY LIGHT SOAKING, Applied physics letters, 73(21), 1998, pp. 3093-3095
Authors:
MCCORMICK CS
WEBER CE
ABELSON JR
DAVIS GA
WEISS RE
AEBI V
Citation: Cs. Mccormick et al., LOW-TEMPERATURE FABRICATION OF AMORPHOUS-SILICON THIN-FILM TRANSISTORS BY DC REACTIVE MAGNETRON SPUTTERING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 15(5), 1997, pp. 2770-2776
Authors:
GLASS G
KIM H
SARDELA MR
LU Q
CARLSSON JRA
ABELSON JR
GREENE JE
Citation: G. Glass et al., EFFECTS OF HIGH B-DOPING AN SI(001) DANGLING BOND DENSITIES, H DESORPTION AND FILM GROWTH-KINETICS DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY, Surface science, 392(1-3), 1997, pp. 63-68
Authors:
KIM H
TAYLOR N
SPILA T
GLASS G
PARK SY
GREENE JE
ABELSON JR
Citation: H. Kim et al., STRUCTURE OF THE SI(011)-(16X2) SURFACE AND HYDROGEN DESORPTION-KINETICS INVESTIGATED USING TEMPERATURE-PROGRAMMED DESORPTION, Surface science, 380(2-3), 1997, pp. 496-500
Authors:
LU Q
SARDELA MR
TAYLOR N
GLASS G
BRAMBLETT TR
SPILA T
ABELSON JR
GREENE JR
Citation: Q. Lu et al., B INCORPORATION AND HOLE TRANSPORT IN FULLY STRAINED HETEROEPITAXIAL SI1-XGEX GROWN ON SI(001) BY GAS-SOURCE MBE FROM SI2H6, GE2H6, AND B2H6, Journal of crystal growth, 179(1-2), 1997, pp. 97-107
Authors:
KIM H
GLASS G
SPILA T
TAYLOR N
PARK SY
ABELSON JR
GREENE JE
Citation: H. Kim et al., SI(001)-B GAS-SOURCE MOLECULAR-BEAM EPITAXY - BORON SURFACE SEGREGATION AND ITS EFFECT ON FILM GROWTH-KINETICS, Journal of applied physics, 82(5), 1997, pp. 2288-2297
Authors:
KIM H
TAYLOR N
ABELSON JR
GREENE JE
Citation: H. Kim et al., EFFECTS OF H-COVERAGE ON GE SEGREGATION DURING SI1-XGEX GAS-SOURCE MOLECULAR-BEAM EPITAXY, Journal of applied physics, 82(12), 1997, pp. 6062-6066
Authors:
VONKEUDELL A
ABELSON JR
Citation: A. Vonkeudell et Jr. Abelson, EVIDENCE FOR ATOMIC H INSERTION INTO STRAINED SI-SI BONDS IN THE AMORPHOUS HYDROGENATED SILICON SUBSURFACE FROM IN-SITU INFRARED-SPECTROSCOPY, Applied physics letters, 71(26), 1997, pp. 3832-3834
Authors:
NURUDDIN A
ABELSON JR
Citation: A. Nuruddin et Jr. Abelson, DOES A DIPOLE LAYER AT THE P-I INTERFACE REDUCE THE BUILT-IN VOLTAGE OF AMORPHOUS-SILICON P-I-N SOLAR-CELLS, Applied physics letters, 71(19), 1997, pp. 2797-2799
Authors:
MCCORMICK CS
WEBER CE
ABELSON JR
GATES SM
Citation: Cs. Mccormick et al., AN AMORPHOUS-SILICON THIN-FILM-TRANSISTOR FABRICATED AT 125-DEGREES-CBY DC REACTIVE MAGNETRON SPUTTERING, Applied physics letters, 70(2), 1997, pp. 226-227
Authors:
PARK DG
TAO M
LI D
BOTCHKAREV AE
FAN Z
WANG Z
MOHAMMAD SN
ROCKETT A
ABELSON JR
MORKOC H
HEYD AR
ALTEROVITZ SA
Citation: Dg. Park et al., GATE QUALITY SI3N4 PREPARED BY LOW-TEMPERATURE REMOTE PLASMA-ENHANCEDCHEMICAL-VAPOR-DEPOSITION FOR III-V SEMICONDUCTOR-BASED METAL-INSULATOR-SEMICONDUCTOR DEVICES, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 14(4), 1996, pp. 2674-2683
Authors:
KIM H
GLASS G
PARK SY
SPILA T
TAYLOR N
ABELSON JR
GREENE JE
Citation: H. Kim et al., EFFECTS OF B DOPING ON HYDROGEN DESORPTION FROM SI(001) DURING GAS-SOURCE MOLECULAR-BEAM EPITAXY FROM SI2H6 AND B2H6, Applied physics letters, 69(25), 1996, pp. 3869-3871
Authors:
CAHILL DG
KATIYAR M
ABELSON JR
Citation: Dg. Cahill et al., HEAT-TRANSPORT IN MICRON THICK A-SI-H FILMS, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 71(4), 1995, pp. 677-682
Authors:
KATIYAR M
ABELSON JR
Citation: M. Katiyar et Jr. Abelson, METHODS TO ENHANCE ABSORPTION SIGNALS IN INFRARED REFLECTANCE SPECTROSCOPY - A COMPARISON USING OPTICAL SIMULATIONS, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(4), 1995, pp. 2005-2012
Authors:
YANG YH
ABELSON JR
Citation: Yh. Yang et Jr. Abelson, SPECTROSCOPIC ELLIPSOMETRY OF THIN-FILMS ON TRANSPARENT SUBSTRATES - A FORMALISM FOR DATA INTERPRETATION, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 13(3), 1995, pp. 1145-1149
Authors:
KATIYAR M
YANG YH
ABELSON JR
Citation: M. Katiyar et al., SI-C-H BONDING IN AMORPHOUS SI1-XCX-H FILM SUBSTRATE INTERFACES DETERMINED BY REAL-TIME INFRARED-ABSORPTION DURING REACTIVE MAGNETRON SPUTTER-DEPOSITION/, Journal of applied physics, 78(3), 1995, pp. 1659-1663
Authors:
KATIYAR M
YANG YH
ABELSON JR
Citation: M. Katiyar et al., HYDROGEN-SURFACE REACTIONS DURING THE GROWTH OF HYDROGENATED AMORPHOUS-SILICON BY REACTIVE MAGNETRON SPUTTERING - A REAL-TIME KINETIC-STUDYBY IN-SITU INFRARED-ABSORPTION, Journal of applied physics, 77(12), 1995, pp. 6247-6256
Authors:
YANG YH
ABELSON JR
Citation: Yh. Yang et Jr. Abelson, GROWTH OF POLYCRYSTALLINE SILICON AT 470-DEGREES-C BY MAGNETRON SPUTTERING ONTO A SPUTTERED MU-C-HYDROGENATED SILICON SEED LAYER, Applied physics letters, 67(24), 1995, pp. 3623-3625
Authors:
PETROV I
MYERS A
GREENE JE
ABELSON JR
Citation: I. Petrov et al., MASS AND ENERGY-RESOLVED DETECTION OF IONS AND NEUTRAL SPUTTERED SPECIES INCIDENT AT THE SUBSTRATE DURING REACTIVE MAGNETRON SPUTTERING OF TI IN MIXED AR+N2 MIXTURES, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(5), 1994, pp. 2846-2854
Authors:
LIANG YH
ABELSON JR
Citation: Yh. Liang et Jr. Abelson, POSTHYDROGENATION STUDY OF A-SI FILMS GROWN BY REACTIVE MAGNETRON SPUTTERING, Journal of vacuum science & technology. A. Vacuum, surfaces, and films, 12(4), 1994, pp. 1099-1102