Authors:
DOYLE JP
ABOELFOTOH MO
SVENSSON BG
SCHONER A
NORDELL N
Citation: Jp. Doyle et al., CHARACTERIZATION OF ELECTRICALLY ACTIVE DEEP-LEVEL DEFECTS IN 4H AND 6H SIC, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1388-1391
Authors:
ABOELFOTOH MO
OKTYABRSKY S
NARAYAN J
WOODALL JM
Citation: Mo. Aboelfotoh et al., ELECTRICAL AND MICROSTRUCTURAL CHARACTERISTICS OF GE CU OHMIC CONTACTS TO N-TYPE GAAS/, Journal of materials research, 12(9), 1997, pp. 2325-2331
Citation: S. Oktyabrsky et al., MICROSTRUCTURE AND CHEMISTRY OF CU-GE OHMIC CONTACT LAYERS TO GAAS, Journal of electronic materials, 25(11), 1996, pp. 1673-1683
Authors:
BOREK MA
OKTYABRSKY S
ABOELFOTOH MO
NARAYAN J
Citation: Ma. Borek et al., LOW-RESISTIVITY COPPER GERMANIDE ON (100)SI FOR CONTACTS AND INTERCONNECTIONS, Applied physics letters, 69(23), 1996, pp. 3560-3562
Authors:
ABOELFOTOH MO
KERN RS
TANAKA S
DAVIS RF
HARRIS CI
Citation: Mo. Aboelfotoh et al., ELECTRICAL CHARACTERISTICS OF METAL ALN/N-TYPE 6H-SIC(0001) HETEROSTRUCTURES/, Applied physics letters, 69(19), 1996, pp. 2873-2875
Citation: Mo. Aboelfotoh et Bg. Svensson, INTERACTION BETWEEN COPPER AND POINT-DEFECTS IN SILICON IRRADIATED WITH 2-MEV ELECTRONS, Physical review. B, Condensed matter, 52(4), 1995, pp. 2522-2527
Citation: Hm. Tawancy et Mo. Aboelfotoh, EFFECT OF PHASE-TRANSITIONS IN COPPER-GERMANIUM THIN-FILM ALLOYS ON THEIR ELECTRICAL-RESISTIVITY, Journal of Materials Science, 30(23), 1995, pp. 6053-6064
Authors:
DOYLE JP
SVENSSON BG
ABOELFOTOH MO
HUDNER J
Citation: Jp. Doyle et al., AN INVESTIGATION OF THE STABILITY OF COPPER GERMANIDE THIN-FILMS IN THE PRESENCE OF SI AND SIO2, Physica scripta. T, 54, 1994, pp. 297-299
Citation: Mo. Aboelfotoh et Hm. Tawancy, EFFECT OF CRYSTAL-STRUCTURE ON THE ELECTRICAL-RESISTIVITY OF COPPER-GERMANIUM THIN-FILM ALLOYS, Journal of applied physics, 75(5), 1994, pp. 2441-2446
Citation: Mo. Aboelfotoh et C. Feger, FREQUENCY-DEPENDENCE OF DIELECTRIC LOSS IN THIN AROMATIC POLYIMIDE FILMS, Physical review. B, Condensed matter, 47(20), 1993, pp. 13395-13400
Citation: Mo. Aboelfotoh et Bg. Svensson, ELECTRICAL-PROPERTIES OF COPPER SILICON SCHOTTKY BARRIERS, Semiconductor science and technology, 6(7), 1991, pp. 647-652