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Results: 7
ELECTRICAL, MAGNETIC, AND STRUCTURAL-PROPERTIES OF SN1-XMNXTE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY
Authors:
NADOLNY AJ
SADOWSKI J
STORY T
DOBROWOLSKI W
ARCISZEWSKA M
SWIATEK K
KACHNIARZ J
ADAMCZEWSKA J
Citation: Aj. Nadolny et al., ELECTRICAL, MAGNETIC, AND STRUCTURAL-PROPERTIES OF SN1-XMNXTE LAYERS GROWN BY MOLECULAR-BEAM EPITAXY, Acta Physica Polonica. A, 94(3), 1998, pp. 449-453
Authors:
SADOWSKI J
GRODZICKA E
DYNOWSKA E
ADAMCZEWSKA J
DOMAGALA J
PRZEDPELSKI W
Citation: J. Sadowski et al., STRUCTURAL AND ELECTRICAL-PROPERTIES OF LOW CONCENTRATION SNTE LAYERSAND PBTE SNTE HETEROSTRUCTURES GROWN BY MBE/, Acta Physica Polonica. A, 92(5), 1997, pp. 967-970
Authors:
KANIEWSKA M
REGINSKI K
KANIEWSKI J
MUSZALSKI J
ORNOCH L
ADAMCZEWSKA J
MARCZEWSKI J
BUGAJSKI M
MIZERA E
Citation: M. Kaniewska et al., IDENTIFICATION OF RESIDUAL IMPURITIES IN SI-DOPED MBE GROWN GAAS, Acta Physica Polonica. A, 88(4), 1995, pp. 775-778
Authors:
AULEYTNER J
ADAMCZEWSKA J
BARCZ A
GORECKA J
REGINSKI K
Citation: J. Auleytner et al., X-RAY ELECTRONO-OPTICAL AND SIMS CHARACTERIZATION OF SI CRYSTALS IMPLANTED WITH BI IONS BEFORE AND AFTER RAPID THERMAL ANNEALING, Crystal research and technology, 30(1), 1995, pp. 129-133
Authors:
BARCZ A
ADAMCZEWSKA J
BARANOWSKI JM
KWIATKOWSKI S
Citation: A. Barcz et al., MECHANISM OF THERMAL INTERACTION OF IN WITH GAAS, Acta Physica Polonica. A, 84(4), 1993, pp. 801-803
Authors:
KAMINSKA E
PIOTROWSKA A
PIOTROWSKI TT
BARCZ A
GUZIEWICZ M
ADAMCZEWSKA J
KWIATKOWSKI S
Citation: E. Kaminska et al., SHALLOW OHMIC CONTACT SYSTEM TO N-GAAS, Acta Physica Polonica. A, 84(4), 1993, pp. 804-806
Authors:
AULEYTNER J
ADAMCZEWSKA J
REGINSKI K
Citation: J. Auleytner et al., THE REAL STRUCTURE OF GE IONS-IMPLANTED SI CRYSTALS SUBJECTED TO THERMAL ANNEALING, Crystal research and technology, 28(7), 1993, pp. 959-964
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