Authors:
AIDA MS
ATTAF N
BENZEGOUTA A
HADJERIS L
SELMI M
ABDELWAHAB O
Citation: Ms. Aida et al., ENHANCED DEPOSITION RATE OF SPUTTERED AMORPHOUS-SILICON WITH A HELIUMAND ARGON GAS-MIXTURE, Philosophical magazine letters, 76(2), 1997, pp. 117-123
Citation: Ms. Aida et M. Ghrieb, ELECTRICAL AND OPTICAL-PROPERTIES OF PHOSPHORUS-DOPED A-SIC-H THIN-FILMS, Materials chemistry and physics, 47(1), 1997, pp. 97-100
Citation: Ms. Aida et al., THE OPTICAL-PROPERTIES OF SPUTTERED AMORPHOUS-SILICON NITRIDE FILMS -EFFECT OF RF POWER, Philosophical magazine. B. Physics of condensed matter. Statistical mechanics, electronic, optical and magnetic, 73(2), 1996, pp. 339-347
Citation: Ms. Aida et S. Rahmane, MEASUREMENT OF THE STRIKING FORCE OF AR IONS ON THE SUBSTRATE DURING SPUTTER-DEPOSITION OF A-SI-H THIN-FILMS, Thin solid films, 288(1-2), 1996, pp. 83-85
Citation: Ms. Aida et R. Bachiri, THE SURFACE-PROPERTIES OF SPUTTERED AMORPHOUS-SILICON THIN-FILMS, Journal of non-crystalline solids, 189(1-2), 1995, pp. 167-172
Citation: Ms. Aida et K. Mirouh, EFFECT OF RF POWER ON THE MICROSTRUCTURE OF A-SIH FILMS, Physica status solidi. a, Applied research, 136(1), 1993, pp. 31-33
Citation: Ms. Aida, ENERGY-DISTRIBUTION OF AR IONS AT THE SUBSTRATE IN THE SPUTTERING DEPOSITION OF A-SIH FILMS, Journal of non-crystalline solids, 160(1-2), 1993, pp. 99-104