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Results: 1-10 |
Results: 10
STABILITY OF PLASMA OXIDIZED ULTRATHIN SIO2 LAYERS IN NTP CONDITIONS
Authors: MAJAMAA T AIRAKSINEN VM NOVIKOV S
Citation: T. Majamaa et al., STABILITY OF PLASMA OXIDIZED ULTRATHIN SIO2 LAYERS IN NTP CONDITIONS, Physica scripta. T, T69, 1997, pp. 215-217
FABRICATION OF ULTRATHIN SILICON DIOXIDE LAYERS IN ULTRA-HIGH-VACUUM
Authors: MAJAMAA T AIRAKSINEN VM SINKKONEN J
Citation: T. Majamaa et al., FABRICATION OF ULTRATHIN SILICON DIOXIDE LAYERS IN ULTRA-HIGH-VACUUM, Applied surface science, 107, 1996, pp. 172-177
FABRICATION OF SUB-100 NM GAAS COLUMNS BY REACTIVE ION ETCHING USING AU ISLANDS AS ETCHING MASK
Authors: AHOPELTO J AIRAKSINEN VM SIREN E NIEMI HEM
Citation: J. Ahopelto et al., FABRICATION OF SUB-100 NM GAAS COLUMNS BY REACTIVE ION ETCHING USING AU ISLANDS AS ETCHING MASK, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(1), 1995, pp. 161-162
MICROSCOPIC STRUCTURE OF THE DX CENTER IN SI-DOPED ALXGA1-XAS - OBSERVATION OF A VACANCY BY POSITRON-ANNIHILATION SPECTROSCOPY
Authors: MAKINEN J LAINE T SAARINEN K HAUTOJARVI P CORBEL C AIRAKSINEN VM NAGLE J
Citation: J. Makinen et al., MICROSCOPIC STRUCTURE OF THE DX CENTER IN SI-DOPED ALXGA1-XAS - OBSERVATION OF A VACANCY BY POSITRON-ANNIHILATION SPECTROSCOPY, Physical review. B, Condensed matter, 52(7), 1995, pp. 4870-4883
OPTICAL SPECTROSCOPY OF BRAGG CONFINED TRANSITIONS IN A SUPERLATTICE WITH MULTIQUANTUM BARRIERS
Authors: LIPSANEN HK TASKINEN K AIRAKSINEN VM
Citation: Hk. Lipsanen et al., OPTICAL SPECTROSCOPY OF BRAGG CONFINED TRANSITIONS IN A SUPERLATTICE WITH MULTIQUANTUM BARRIERS, Solid state communications, 93(6), 1995, pp. 525-528
GROWTH AND CHARACTERIZATION OF A GAAS ALAS SUPERLATTICE WITH VARIABLELAYER THICKNESSES/
Authors: LIPSANEN HK AIRAKSINEN VM
Citation: Hk. Lipsanen et Vm. Airaksinen, GROWTH AND CHARACTERIZATION OF A GAAS ALAS SUPERLATTICE WITH VARIABLELAYER THICKNESSES/, Journal of electronic materials, 23(5), 1994, pp. 465-470
GROWTH OF SILICON-CARBIDE ON (100) SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY
Authors: AIRAKSINEN VM KAITILA J NIEMI H LAHTINEN J SAARILAHTI J
Citation: Vm. Airaksinen et al., GROWTH OF SILICON-CARBIDE ON (100) SILICON SUBSTRATES BY MOLECULAR-BEAM EPITAXY, Physica scripta. T, 54, 1994, pp. 205-207
FABRICATION OF NANOSTRUCTURES USING MBE AND MOVPE
Authors: AHOPELTO J LIPSANEN HK SOPANEN M KOLJONEN T TUOMI T AIRAKSINEN VM SINKKONEN J SIREN E
Citation: J. Ahopelto et al., FABRICATION OF NANOSTRUCTURES USING MBE AND MOVPE, Physica scripta. T, 54, 1994, pp. 241-243
OBSERVATION OF A VACANCY AT THE DX CENTER IN SI-DOPED AND SN-DOPED ALGAAS
Authors: MAKINEN J LAINE T SAARINEN K HAUTOJARVI P CORBEL C AIRAKSINEN VM GIBART P
Citation: J. Makinen et al., OBSERVATION OF A VACANCY AT THE DX CENTER IN SI-DOPED AND SN-DOPED ALGAAS, Physical review letters, 71(19), 1993, pp. 3154-3157
INTERFERENCE EFFECTS IN PHOTOREFLECTANCE OF EPITAXIAL LAYERS GROWN ONSEMIINSULATING SUBSTRATES
Authors: LIPSANEN HK AIRAKSINEN VM
Citation: Hk. Lipsanen et Vm. Airaksinen, INTERFERENCE EFFECTS IN PHOTOREFLECTANCE OF EPITAXIAL LAYERS GROWN ONSEMIINSULATING SUBSTRATES, Applied physics letters, 63(21), 1993, pp. 2863-2865
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