Results: 1-6 |
Results: 6
0.15 MU-M CMOS DEVICES WITH REDUCED JUNCTION CAPACITANCE
Authors: TANABE A TAKEUCHI K YAMAMOTO T MATSUKI T KUNIO T FUKUMA M NAKAJIMA K AIZAKI N MIYAMOTO H IKAWA E
Citation: A. Tanabe et al., 0.15 MU-M CMOS DEVICES WITH REDUCED JUNCTION CAPACITANCE, IEICE transactions on electronics, E78C(3), 1995, pp. 267-273
0.25 MU-M ELECTRON-BEAM DIRECT WRITING TECHNIQUES FOR 256 MBIT DYNAMIC RANDOM-ACCESS MEMORY FABRICATION
Authors: NAKAJIMA K KOJIMA Y HIRASAWA S MUKAI H ISHIDA S HIROTA T KONDOH K AIZAKI N
Citation: K. Nakajima et al., 0.25 MU-M ELECTRON-BEAM DIRECT WRITING TECHNIQUES FOR 256 MBIT DYNAMIC RANDOM-ACCESS MEMORY FABRICATION, JPN J A P 1, 32(12B), 1993, pp. 6023-6027
A 30-NS 256-MB DRAM WITH A MULTIDIVIDED ARRAY STRUCTURE
Authors: SUGIBAYASHI T TAKESHIMA T NARITAKE I MATANO T TAKADA H AIMOTO Y FURUTA K FUJITA M SAEKI T SUGAWARA H MUROTANI T KASAI N SHIBAHARA K NAKAJIMA K HADA H HAMADA T AIZAKI N KUNIO T KAKEHASHI E MASUMORI K TANIGAWA T
Citation: T. Sugibayashi et al., A 30-NS 256-MB DRAM WITH A MULTIDIVIDED ARRAY STRUCTURE, IEEE journal of solid-state circuits, 28(11), 1993, pp. 1092-1098
APPLICATION OF KRF EXCIMER-LASER LITHOGRAPHY TO 256 MBDRAM FABRICATION
Authors: FUKUZAWA S YOSHINO H ISHIDA S KONDOH K YOSHII T AIZAKI N
Citation: S. Fukuzawa et al., APPLICATION OF KRF EXCIMER-LASER LITHOGRAPHY TO 256 MBDRAM FABRICATION, IEICE transactions on electronics, E76C(11), 1993, pp. 1665-1669
EFFECT OF BEAM CONDITION IN VARIABLE-SHAPED ELECTRON-BEAM DIRECT WRITING FOR 0.25 MU-M AND BELOW
Authors: HIRASAWA S NAKAJIMA K TAMURA T AIZAKI N
Citation: S. Hirasawa et al., EFFECT OF BEAM CONDITION IN VARIABLE-SHAPED ELECTRON-BEAM DIRECT WRITING FOR 0.25 MU-M AND BELOW, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(6), 1993, pp. 2319-2322
IMPROVED REGISTRATION ACCURACY IN E-BEAM DIRECT WRITING LITHOGRAPHY
Authors: KOJIMA Y MUKAI H NAKAJIMA K AIZAKI N
Citation: Y. Kojima et al., IMPROVED REGISTRATION ACCURACY IN E-BEAM DIRECT WRITING LITHOGRAPHY, JPN J A P 1, 32(12B), 1993, pp. 6035-6038
Risultati: 1-6 |