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Results:
1-8
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Results: 8
Authors:
MARMALYUK AA
AKCHURIN RK
GORBYLEV VA
Citation: Aa. Marmalyuk et al., EVALUATION OF ELASTIC-CONSTANTS OF ALN, GAN, AND INN, Inorganic materials, 34(7), 1998, pp. 691-694
Authors:
MARMALYUK AA
AKCHURIN RK
GORBYLEV VA
Citation: Aa. Marmalyuk et al., THEORETICAL CALCULATION OF THE DEBYE TEMPERATURE AND TEMPERATURE-DEPENDENCE OF HEAT-CAPACITY OF ALUMINUM, GALLIUM, AND INDIUM NITRIDES, High temperature, 36(5), 1998, pp. 817-819
Authors:
AKCHURIN RK
ZHEGALIN VA
SAKHAROVA TV
SEREGIN SV
Citation: Rk. Akchurin et al., FABRICATION OF INDIUM ARSENIC-ANTIMONY-BISMUTHIDE MULTILAYER HETEROSTRUCTURES BY CAPILLARY LIQUID-PHASE EPITAXY, Technical physics letters, 23(4), 1997, pp. 274-275
Authors:
AKCHURIN RK
KOMAROV DV
Citation: Rk. Akchurin et Dv. Komarov, FORMATION OF MULTILAYER STRAINED-LAYER HETEROSTRUCTURES BY LIQUID EPITAXY - I - THEORETICAL ASPECTS OF THE PROBLEM AND MATHEMATICAL-MODEL, Technical physics, 42(7), 1997, pp. 755-761
Authors:
AKCHURIN RK
KOMAROV DV
Citation: Rk. Akchurin et Dv. Komarov, FORMATION OF MULTILAYER STRAINED-LAYER HETEROSTRUCTURES BY LIQUID EPITAXY - II - SIMULATION OF THE FABRICATION OF HETEROSTRUCTURES BASED ONINDIUM-ARSENIC-ANTIMONY-BISMUTH SOLID-SOLUTIONS, Technical physics, 42(7), 1997, pp. 762-768
Authors:
AKCHURIN RK
AKIMOV OV
Citation: Rk. Akchurin et Ov. Akimov, STRAINED THIN-LAYER INAS1-X-YSBXBIY INSB HETEROSTRUCTURES - CALCULATION OF CERTAIN PHYSICAL-PROPERTIES/, Semiconductors, 29(2), 1995, pp. 183-186
Authors:
AKCHURIN RK
SAHAROVA TV
Citation: Rk. Akchurin et Tv. Saharova, DISLOCATION-STRUCTURE OF INAS1-X-YSBXBIY INSB HETEROSTRUCTURES/, Kristallografia, 40(4), 1995, pp. 729-735
Authors:
AKCHURIN RK
SAKHAROVA TV
ZHEGALIN VA
Citation: Rk. Akchurin et al., CONDITIONS FOR LPE GROWTH OF INAS1-X-YSBXBIY INSB HETEROSTRUCTURES/, Inorganic materials, 31(11), 1995, pp. 1298-1302
Risultati:
1-8
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