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Results:
1-14
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Results: 14
Authors:
MARSAL LF
PALLARES J
CORREIG X
ORPELLA A
BARDES D
ALCUBILLA R
Citation: Lf. Marsal et al., CURRENT TRANSPORT MECHANISMS IN N-TYPE AMORPHOUS SILICON-CARBON ON P-TYPE CRYSTALLINE SILICON (A-SI0.8C0.2-H C-SI) HETEROJUNCTION DIODES/, Semiconductor science and technology (Print), 13(10), 1998, pp. 1148-1153
DISTRIBUTION OF RECOMBINATION CURRENTS IN THE SPACE-CHARGE REGION OF HETEROSTRUCTURE BIPOLAR-DEVICES
Authors:
PALLARES J
MARSAL LF
CORREIG X
CALDERER J
ALCUBILLA R
Citation: J. Pallares et al., DISTRIBUTION OF RECOMBINATION CURRENTS IN THE SPACE-CHARGE REGION OF HETEROSTRUCTURE BIPOLAR-DEVICES, I.E.E.E. transactions on electron devices, 45(1), 1998, pp. 54-61
Authors:
LLOBET E
VILANOVA X
BREZMES J
SUEIRAS JE
ALCUBILLA R
CORREIG X
Citation: E. Llobet et al., STEADY-STATE AND TRANSIENT-BEHAVIOR OF THICK-FILM TIN OXIDE SENSORS IN THE PRESENCE OF GAS-MIXTURES, Journal of the Electrochemical Society, 145(5), 1998, pp. 1772-1779
Authors:
LLOBET E
VILANOVA X
BREZMES J
ALCUBILLA R
CALDERER J
SUEIRAS JE
CORREIG X
Citation: E. Llobet et al., CONDUCTANCE-TRANSIENT ANALYSIS OF THICK-FLINT TIN OXIDE GAS SENSORS UNDER SUCCESSIVE GAS-INJECTION STEPS, Measurement science & technology, 8(10), 1997, pp. 1133-1138
Authors:
MARSAL LF
PALLARES J
CORREIG X
DOMINGUEZ M
BARDES D
CALDERER J
ALCUBILLA R
Citation: Lf. Marsal et al., ELECTRICAL-PROPERTIES OF PECVD AMORPHOUS SILICON-CARBON ALLOYS FROM AMORPHOUS-CRYSTALLINE HETEROJUNCTIONS, DIAMOND AND RELATED MATERIALS, 6(10), 1997, pp. 1555-1558
Authors:
BARDES D
ALCUBILLA R
Citation: D. Bardes et R. Alcubilla, ANALYTICAL MODELING OF BJT NEUTRAL BASE REGION UNDER VARIABLE INJECTION CONDITIONS, Solid-state electronics, 41(8), 1997, pp. 1177-1180
Authors:
PALLARES J
MARSAL LF
CORREIG X
CALDERER J
ALCUBILLA R
Citation: J. Pallares et al., SPACE-CHARGE RECOMBINATION IN P-N-JUNCTIONS WITH A DISCRETE AND CONTINUOUS TRAP DISTRIBUTION, Solid-state electronics, 41(1), 1997, pp. 17-23
Authors:
JIMENEZ V
ALCUBILLA R
Citation: V. Jimenez et R. Alcubilla, AN ACCURATE TRANSIENT MODEL FOR BICMOS GATE OPTIMIZATION, International journal of electronics, 82(5), 1997, pp. 503-514
Authors:
VILANOVA X
LLOBET E
ALCUBILLA R
SUEIRAS JE
CORREIG X
Citation: X. Vilanova et al., ANALYSIS OF THE CONDUCTANCE TRANSIENT IN THICK-FILM TIN OXIDE GAS SENSORS, Sensors and actuators. B, Chemical, 31(3), 1996, pp. 175-180
Authors:
MARSAL LF
PALLARES J
CORREIG X
CALDERER J
ALCUBILLA R
Citation: Lf. Marsal et al., ELECTRICAL MODEL FOR AMORPHOUS CRYSTALLINE HETEROJUNCTION SILICON DIODES (N-A-SI-H/P C-SI)/, Semiconductor science and technology, 11(8), 1996, pp. 1209-1213
Authors:
MARSAL LF
PALLARES J
CORREIG X
CALDERER J
ALCUBILLA R
Citation: Lf. Marsal et al., ELECTRICAL CHARACTERIZATION OF N-AMORPHOUS P-CRYSTALLINE SILICON HETEROJUNCTIONS/, Journal of applied physics, 79(11), 1996, pp. 8493-8497
Authors:
CASTANER LM
ALCUBILLA R
BENAVENT A
Citation: Lm. Castaner et al., BIPOLAR-TRANSISTOR VERTICAL SCALING FRAMEWORK, Solid-state electronics, 38(7), 1995, pp. 1367-1371
Authors:
PONS J
ALCUBILLA R
Citation: J. Pons et R. Alcubilla, SUPERPOSITION SOLUTIONS FOR EMITTER QUANTUM EFFICIENCY, Solid-state electronics, 38(1), 1995, pp. 252-254
Authors:
CASTANER LM
SUREDA S
BARDES D
ALCUBILLA R
Citation: Lm. Castaner et al., A COMPACT CHARGE RATIO EXPRESSION FOR THE EMITTER DELAY OF POLYSILICON EMITTER BIPOLAR-TRANSISTORS, I.E.E.E. transactions on electron devices, 41(3), 1994, pp. 454-455
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1-14
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