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Results: 1-11 |
Results: 11
ELECTRONIC-PROPERTIES OF TETRAHEDRAL AMORPHOUS-CARBON (TA-C) FILMS CONTAINING NANOTUBE REGIONS
Authors: AMARATUNGA GAJ CHHOWALLA M LIM KG MUNINDRADASA DAI PRINGLE SD BAXENDALE M ALEXANDROU I KIELY CJ KEYSE B
Citation: Gaj. Amaratunga et al., ELECTRONIC-PROPERTIES OF TETRAHEDRAL AMORPHOUS-CARBON (TA-C) FILMS CONTAINING NANOTUBE REGIONS, Carbon (New York), 36(5-6), 1998, pp. 575-579
GENERATION AND DEPOSITION OF FULLERENE-RICH AND NANOTUBE-RICH CARBON THIN-FILMS
Authors: CHHOWALLA M AHARONOV RA KIELY CJ ALEXANDROU I AMARATUNGA GAJ
Citation: M. Chhowalla et al., GENERATION AND DEPOSITION OF FULLERENE-RICH AND NANOTUBE-RICH CARBON THIN-FILMS, Philosophical magazine letters, 75(5), 1997, pp. 329-335
OPTIMIZATION OF TIN THIN-FILM GROWTH WITH IN-SITU MONITORING - THE EFFECT OF BIAS VOLTAGE AND NITROGEN FLOW-RATE
Authors: LOGOTHETIDIS S ALEXANDROU I KOKKOU S
Citation: S. Logothetidis et al., OPTIMIZATION OF TIN THIN-FILM GROWTH WITH IN-SITU MONITORING - THE EFFECT OF BIAS VOLTAGE AND NITROGEN FLOW-RATE, Surface & coatings technology, 80(1-2), 1996, pp. 66-71
INVESTIGATION OF CARBON NITRIDE FILMS BY CATHODIC ARC EVAPORATION
Authors: CHHOWALLA M ALEXANDROU I KIELY C AMARATUNGA GAJ AHARONOV R FONTANA RF
Citation: M. Chhowalla et al., INVESTIGATION OF CARBON NITRIDE FILMS BY CATHODIC ARC EVAPORATION, Thin solid films, 291, 1996, pp. 103-106
IN-SITU SPECTROSCOPIC ELLIPSOMETRY FOR MONITORING THE TI-SI MULTILAYERS DURING GROWTH AND ANNEALING
Authors: LOGOTHETIDIS S ALEXANDROU I VOUROUTZIS N
Citation: S. Logothetidis et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY FOR MONITORING THE TI-SI MULTILAYERS DURING GROWTH AND ANNEALING, Thin solid films, 275(1-2), 1996, pp. 44-47
HARD ELASTIC CARBON THIN-FILMS FROM LINKING OF CARBON NANOPARTICLES
Authors: AMARATUNGA GAJ CHHOWALLA M KIELY CJ ALEXANDROU I AHARONOV R DEVENISH RM
Citation: Gaj. Amaratunga et al., HARD ELASTIC CARBON THIN-FILMS FROM LINKING OF CARBON NANOPARTICLES, Nature, 383(6598), 1996, pp. 321-323
EFFECT OF SUBSTRATE BIAS ON SPUTTER-DEPOSITED TICX, TINY AND TICXNY THIN-FILMS
Authors: ADJAOTTOR AA MELETIS EI LOGOTHETIDIS S ALEXANDROU I KOKKOU S
Citation: Aa. Adjaottor et al., EFFECT OF SUBSTRATE BIAS ON SPUTTER-DEPOSITED TICX, TINY AND TICXNY THIN-FILMS, Surface & coatings technology, 76(1-3), 1995, pp. 142-148
IN-SITU SPECTROSCOPIC ELLIPSOMETRY TO CONTROL THE GROWTH OF TI NITRIDE AND CARBIDE THIN-FILMS
Authors: LOGOTHETIDIS S ALEXANDROU I STOEMENOS J
Citation: S. Logothetidis et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY TO CONTROL THE GROWTH OF TI NITRIDE AND CARBIDE THIN-FILMS, Applied surface science, 86(1-4), 1995, pp. 185-189
ELECTRON-MICROSCOPY CHARACTERIZATION OF TIN FILMS ON SI, GROWN BY DC-REACTIVE MAGNETRON SPUTTERING
Authors: PECZ B FRANGIS N LOGOTHETIDIS S ALEXANDROU I BARNA PB STOEMENOS J
Citation: B. Pecz et al., ELECTRON-MICROSCOPY CHARACTERIZATION OF TIN FILMS ON SI, GROWN BY DC-REACTIVE MAGNETRON SPUTTERING, Thin solid films, 268(1-2), 1995, pp. 57-63
IN-SITU SPECTROSCOPIC ELLIPSOMETRY TO MONITOR THE PROCESS OF TINX THIN-FILMS DEPOSITED BY REACTIVE SPUTTERING
Authors: LOGOTHETIDIS S ALEXANDROU I PAPADOPOULOS A
Citation: S. Logothetidis et al., IN-SITU SPECTROSCOPIC ELLIPSOMETRY TO MONITOR THE PROCESS OF TINX THIN-FILMS DEPOSITED BY REACTIVE SPUTTERING, Journal of applied physics, 77(3), 1995, pp. 1043-1047
SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON
Authors: DIMITRIADIS CA LOGOTHETIDIS S ALEXANDROU I
Citation: Ca. Dimitriadis et al., SCHOTTKY-BARRIER CONTACTS OF TITANIUM NITRIDE ON N-TYPE SILICON, Applied physics letters, 66(4), 1995, pp. 502-504
Risultati: 1-11 |