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Results: 1-9 |
Results: 9
MONOLITHIC INTEGRATION OF A GAAS-MESFET WITH A RESONANT-CAVITY LED USING A BURIED OXIDE LAYER
Authors: WHEELER C DARYANANI S MATHINE DL MARACAS GN ALLEE DR
Citation: C. Wheeler et al., MONOLITHIC INTEGRATION OF A GAAS-MESFET WITH A RESONANT-CAVITY LED USING A BURIED OXIDE LAYER, IEEE photonics technology letters, 9(2), 1997, pp. 194-196
SELECTIVELY OXIDIZED GAAS-MESFETS TRANSFERRED TO A SI SUBSTRATE
Authors: WHEELER CB MATHINE DL JOHNSON SR MARACAS GN ALLEE DR
Citation: Cb. Wheeler et al., SELECTIVELY OXIDIZED GAAS-MESFETS TRANSFERRED TO A SI SUBSTRATE, IEEE electron device letters, 18(4), 1997, pp. 138-140
SELECTIVE-AREA OXIDATION OF SI3N4 WITH AN AMBIENT SCANNING TUNNELING MICROSCOPE
Authors: DAY HC ALLEE DR
Citation: Hc. Day et Dr. Allee, SELECTIVE-AREA OXIDATION OF SI3N4 WITH AN AMBIENT SCANNING TUNNELING MICROSCOPE, Nanotechnology, 7(2), 1996, pp. 106-109
NANOLITHOGRAPHY
Authors: FERRY DK KHOURY M PIVIN DP CONNOLLY KM WHIDDEN TK KOZICKI MN ALLEE DR
Citation: Dk. Ferry et al., NANOLITHOGRAPHY, Semiconductor science and technology, 11(11), 1996, pp. 1552-1557
REDUCTION OF THE THERMAL IMPEDANCE OF VERTICAL-CAVITY SURFACE-EMITTING LASERS AFTER INTEGRATION WITH COPPER SUBSTRATES
Authors: MATHINE DL ALLEE DR DROOPAD R MARACAS GN
Citation: Dl. Mathine et al., REDUCTION OF THE THERMAL IMPEDANCE OF VERTICAL-CAVITY SURFACE-EMITTING LASERS AFTER INTEGRATION WITH COPPER SUBSTRATES, Applied physics letters, 69(4), 1996, pp. 463-464
AMBIENT SCANNING TUNNELING LITHOGRAPHY OF LANGMUIR-BLODGETT AND SELF-ASSEMBLED MONOLAYERS
Authors: XU LS ALLEE DR
Citation: Ls. Xu et Dr. Allee, AMBIENT SCANNING TUNNELING LITHOGRAPHY OF LANGMUIR-BLODGETT AND SELF-ASSEMBLED MONOLAYERS, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 13(6), 1995, pp. 2837-2840
25 NM CHROMIUM-OXIDE LINES BY SCANNING TUNNELING LITHOGRAPHY IN AIR
Authors: SONG HJ RACK MJ ABUGHARBIEH K LEE SY KHAN V FERRY DK ALLEE DR
Citation: Hj. Song et al., 25 NM CHROMIUM-OXIDE LINES BY SCANNING TUNNELING LITHOGRAPHY IN AIR, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 12(6), 1994, pp. 3720-3724
SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/
Authors: VANHOVE M ZOU G DERAEDT W JANSEN P JONCKHEERE R VANROSSUM M HOOLE ACF ALLEE DR BROERS AN CROZAT P JIN Y ANIEL F ADDE R
Citation: M. Vanhove et al., SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1203-1208
SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE
Authors: DAY HC ALLEE DR
Citation: Hc. Day et Dr. Allee, SELECTIVE AREA OXIDATION OF SILICON WITH A SCANNING FORCE MICROSCOPE, Applied physics letters, 62(21), 1993, pp. 2691-2693
Risultati: 1-9 |