Authors: POLYANSKAYA TA ALLEN TY NAZHMUDINOV KG YASTREBOV SG SAVELEV IG

Citation: Ta. Polyanskaya et al., DIFFERENTIAL RESISTANCE OF AU GAAS1-XSBX TUNNELING CONTACTS IN THE ZERO-BIAS ANOMALY REGION - I - CONTACTS TO N-GAAS1-XSBX/, Semiconductors, 32(5), 1998, pp. 513-516

Authors: POLYANSKAYA TA ALLEN TY NAZHMUDINOV KG SAVELEV IG

Citation: Ta. Polyanskaya et al., DIFFERENTIAL RESISTANCE OF AU GAAS1-XSBX TUNNELING CONTACTS NEAR THE ZERO-BIAS ANOMALY - II - CONTACTS TO P-GAAS1-XSBX/, Semiconductors, 32(5), 1998, pp. 517-520

Authors: ALLEN TY POLYANSKAYA TA

Citation: Ty. Allen et Ta. Polyanskaya, ELECTRICAL-PROPERTIES OF THE SOLID-SOLUTIONS P-TYPE GAAS1-XSBX DOPED WITH GERMANIUM, Semiconductors, 31(5), 1997, pp. 498-502

Authors: ALLEN TY POLYANSKAYA TA KOPYLOV AA SHAKMAEV AA

Citation: Ty. Allen et al., PHOTOCONDUCTIVITY OF THE GERMANIUM-DOPED SOLID-SOLUTION P-GAAS0.94SB0.06, Semiconductors, 31(4), 1997, pp. 405-406