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Results:
1-10
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Results: 10
Authors:
PONCHET A
LECORRE A
LHARIDON H
LAMBERT B
SALAUN S
ALQUIER D
LACOMBE D
DURAND L
Citation: A. Ponchet et al., THE EFFECT OF THE GROWTH PROCEDURE AND THE INAS AMOUNT ON THE FORMATION OF STRAIN-INDUCED ISLANDS IN THE INAS INP(001) SYSTEM/, Applied surface science, 123, 1998, pp. 751-756
Authors:
BOUSSAID F
BENZOHRA M
OLIVIE F
ALQUIER D
MARTINEZ A
Citation: F. Boussaid et al., ELECTRICALLY ACTIVE DEFECTS IN BF2+ IMPLANTED AND GERMANIUM PREAMORPHIZED SILICON, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 134(2), 1998, pp. 195-201
Authors:
PONCHET A
LACOMBE D
DURAND L
ALQUIER D
CARDONNA JM
Citation: A. Ponchet et al., ELASTIC ENERGY OF STRAINED ISLANDS - CONTRIBUTION OF THE SUBSTRATE ASA FUNCTION OF THE ISLAND ASPECT RATIO AND INTER-ISLAND DISTANCE, Applied physics letters, 72(23), 1998, pp. 2984-2986
Authors:
BENZOHRA M
OLIVIE F
BOUSSAID F
ALQUIER D
MARTINEZ A
Citation: M. Benzohra et al., ELECTRONIC DEFECT LEVELS IN ULTRA-SHALLOW P(-JUNCTIONS FORMED BY LOW-ENERGY B-ION-IMPLANTATION INTO GE-PREAMORPHIZED SILICON()N), JPN J A P 1, 36(7A), 1997, pp. 4346-4350
Authors:
ALQUIER D
VANHAAREN B
BERGAUD C
PLANA R
GRAFFEUIL J
MARTINEZ A
Citation: D. Alquier et al., INFLUENCE OF DEPTH POSITION OF END-OF-RANGE DEFECTS ON CURRENT-VOLTAGE AND NOISE CHARACTERISTICS OF SHALLOW (P(+) N) JUNCTIONS/, JPN J A P 1, 36(4A), 1997, pp. 1999-2003
Authors:
CRISTIANO F
BONAFOS C
NEJIM A
LOMBARDO S
OMRI M
ALQUIER D
MARTINEZ A
CAMPISANO SU
HEMMENT PLF
CLAVERIE A
Citation: F. Cristiano et al., INTERSTITIAL TRAPPING EFFICIENCY OF C- CONTROL OF EOR DEFECTS( IMPLANTED INTO PREAMORPHISED SILICON ), Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 127, 1997, pp. 22-26
Authors:
BONAFOS C
OMRI M
DEMAUDUIT B
BENASSAYAG G
CLAVERIE A
ALQUIER D
MARTINEZ A
MATHIOT D
Citation: C. Bonafos et al., TRANSIENT ENHANCED DIFFUSION OF BORON IN PRESENCE OF END-OF-RANGE DEFECTS, Journal of applied physics, 82(6), 1997, pp. 2855-2861
Authors:
BONAFOS C
CLAVERIE A
ALQUIER D
BERGAUD C
MARTINEZ A
LAANAB L
MATHIOT D
Citation: C. Bonafos et al., THE EFFECT OF THE BORON DOPING LEVEL ON THE THERMAL-BEHAVIOR OF END-OF-RANGE DEFECTS IN SILICON, Applied physics letters, 71(3), 1997, pp. 365-367
Authors:
OMRI M
BONAFOS C
CLAVERIE A
NEJIM A
CRISTIANO F
ALQUIER D
MARTINEZ A
COWERN NEB
Citation: M. Omri et al., IS THERE AN EFFECT OF THE PROXIMITY OF A FREE-SURFACE ON THE FORMATION OF END-OF-RANGE DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 120(1-4), 1996, pp. 5-8
Authors:
BONAFOS C
ALQUIER D
MARTINEZ A
MATHIOT D
CLAVERIE A
Citation: C. Bonafos et al., TED OF BORON IN THE PRESENCE OF EOR DEFECTS - THE USE OF THE THEORY OF OSTWALD RIPENING TO CALCULATE SI-INTERSTITIAL SUPERSATURATION IN THEVICINITY OF EXTRINSIC DEFECTS, Nuclear instruments & methods in physics research. Section B, Beam interactions with materials and atoms, 112(1-4), 1996, pp. 129-132
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