Authors: POLYAKOV AY SMIRNOV NB GOVORKOV AV CHELNIY AA MILNES AG LI XL LEIFEROV BM ALUEV AN

Citation: Ay. Polyakov et al., CONDUCTION-BAND OFFSETS IN INGAALP INGAP HETEROJUNCTIONS AS MEASURED BY DLTS/, Materials science & engineering. B, Solid-state materials for advanced technology, 39(2), 1996, pp. 79-81

Authors: POLYAKOV AY CHELNIY AA SMIRNOV NB GOVORKOV AV MILNES AG LI XL ALUEV AN ORLOV PB

Citation: Ay. Polyakov et al., THE INFLUENCE OF OXYGEN IN PHOSPHINE ON ELECTRICAL-PROPERTIES OF UNDOPED INGAALP LAYERS GROWN BY MOCVD, Materials science & engineering. B, Solid-state materials for advanced technology, 38(1-2), 1996, pp. 36-40

Authors: POLYAKOV AY CHELNIY AA GOVORKOV AV SMIRNOV NB MILNES AG PEARTON SJ WILSON RG BALMASHNOV AA ALUEV AN MARKOV AV

Citation: Ay. Polyakov et al., EFFECTS OF PROTON IMPLANTATION AND HYDROGEN PLASMA PASSIVATION ON ELECTRICAL-PROPERTIES OF INGAALP AND INGAP, Solid-state electronics, 38(6), 1995, pp. 1131-1135