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Results: 51-75/84
Authors:
REDDICK WM
AMARATUNGA GAJ
Citation: Wm. Reddick et Gaj. Amaratunga, SILICON SURFACE TUNNEL TRANSISTOR, Applied physics letters, 67(4), 1995, pp. 494-496
Authors:
RUSLI,"AMARATUNGA GAJ
Citation: Gaj. Rusli,"amaratunga, DETERMINATION OF THE OPTICAL-CONSTANTS AND THICKNESS OF THIN-FILMS ONSLIGHTLY ABSORBING SUBSTRATES, Applied optics, 34(34), 1995, pp. 7914-7924
Authors:
SILVA SRP
AMARATUNGA GAJ
WOODBURN CN
WELLAND ME
HAQ S
Citation: Srp. Silva et al., QUANTUM SIZE EFFECTS IN AMORPHOUS DIAMOND-LIKE CARBON SUPERLATTICES, JPN J A P 1, 33(12A), 1994, pp. 6458-6465
Authors:
DAVIS CA
VEERASAMY VS
AMARATUNGA GAJ
MILNE WI
MCKENZIE DR
Citation: Ca. Davis et al., PROPERTIES OF TETRAHEDRAL AMORPHOUS-CARBON FILMS DEPOSITED IN A FILTERED CATHODIC ARC IN THE PRESENCE OF HYDROGEN, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(6), 1994, pp. 1121-1131
Authors:
DAVIS CA
MCKENZIE DR
YIN Y
KRAVTCHINSKAIA E
AMARATUNGA GAJ
VERASAMY VS
Citation: Ca. Davis et al., SUBSTITUTIONAL NITROGEN DOPING OF TETRAHEDRAL AMORPHOUS-CARBON, Philosophical magazine. B. Physics of condensed matter. Structural, electronic, optical and magnetic properties, 69(6), 1994, pp. 1133-1140
Authors:
SILVA SRP
KNOWLES KM
AMARATUNGA GAJ
PUTNIS A
Citation: Srp. Silva et al., THE MICROSTRUCTURE OF INCLUSIONS IN NANOCRYSTALLINE CARBON-FILMS DEPOSITED AT LOW-TEMPERATURE, DIAMOND AND RELATED MATERIALS, 3(7), 1994, pp. 1048-1055
Authors:
MCKENZIE DR
YIN Y
MARKS NA
DAVIS CA
PAILTHORPE BA
AMARATUNGA GAJ
VEERASAMY VS
Citation: Dr. Mckenzie et al., HYDROGEN-FREE AMORPHOUS-CARBON PREPARATION AND PROPERTIES, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 353-360
Authors:
RUSLI,"SILVA SRP
AMARATUNGA GAJ
Citation: Srp. Rusli,"silva et Gaj. Amaratunga, THE OPTICAL-PROPERTIES OF BAND-GAP-MODULATED DIAMOND-LIKE CARBON THIN-FILMS, DIAMOND AND RELATED MATERIALS, 3(4-6), 1994, pp. 817-820
Authors:
CHEN W
AMARATUNGA GAJ
NARAYANAN EMS
HUMPHREY J
EVANS AGR
Citation: W. Chen et al., A CMOS COMPATIBLE LATERAL EMITTER SWITCHED THYRISTOR WITH ENHANCED TURN-ON CAPABILITY, IEEE electron device letters, 15(11), 1994, pp. 482-484
Authors:
VEERASAMY VS
AMARATUNGA GAJ
WEILER M
PARK JS
MILNE WI
Citation: Vs. Veerasamy et al., A DISTRIBUTED CARBON CATHODIC VACUUM-ARC, Surface & coatings technology, 68, 1994, pp. 301-308
Authors:
FALLON PJ
VEERASAMY VS
DAVIS CA
ROBERTSON J
AMARATUNGA GAJ
MILNE WI
KOSKINEN J
Citation: Pj. Fallon et al., PROPERTIES OF FILTERED-ION-BEAM-DEPOSITED DIAMOND-LIKE CARBON AS A FUNCTION OF ION ENERGY (VOL 48, PG 4777, 1993), Physical review. B, Condensed matter, 49(3), 1994, pp. 2287-2287
Authors:
SILVA SRP
AMARATUNGA GAJ",RUSLI,"HAQ S
SALJE EK
Citation: Srp. Silva et al., OPTICAL QUANTUM-SIZE EFFECTS IN DIAMOND-LIKE CARBON SUPERLATTICE STRUCTURES, Thin solid films, 253(1-2), 1994, pp. 20-24
Authors:
SILVA SRP
AMARATUNGA GAJ
Citation: Srp. Silva et Gaj. Amaratunga, USE OF SPACE-CHARGE-LIMITED CURRENT TO EVALUATE THE ELECTRONIC DENSITY-OF-STATES IN DIAMOND-LIKE CARBON THIN-FILMS, Thin solid films, 253(1-2), 1994, pp. 146-150
Authors:
UDREA F
AMARATUNGA GAJ
HUANG Q
Citation: F. Udrea et al., THE EFFECT OF THE HOLE CURRENT ON THE CHANNEL INVERSION IN TRENCH INSULATED GATE BIPOLAR-TRANSISTORS (TIGBT) (VOL 37, PG 507, 1994), Solid-state electronics, 37(9), 1994, pp. 180000001-180000001
Authors:
UDREA F
AMARATUNGA GAJ
HUANG Q
Citation: F. Udrea et al., THE EFFECT OF THE HOLE CURRENT ON THE CHANNEL INVERSION IN TRENCH INSULATED GATE BIPOLAR-TRANSISTORS (TIGBT), Solid-state electronics, 37(3), 1994, pp. 507-514
Authors:
VEERASAMY VS
AMARATUNGA GAJ
DAVIS CA
MILNE WI
HEWITT P
Citation: Vs. Veerasamy et al., ELECTRONIC DENSITY-OF-STATES IN HIGHLY TETRAHEDRAL AMORPHOUS-CARBON, Solid-state electronics, 37(2), 1994, pp. 319-326
Authors:
UDREA F
AMARATUNGA GAJ
Citation: F. Udrea et Gaj. Amaratunga, ANALYSIS OF A MOS-CONTROLLABLE THYRISTOR UTILIZING AN INVERSION LAYEREMITTER, Solid-state electronics, 37(12), 1994, pp. 1999-2002
Authors:
DAVIS CA
YIN Y
MCKENZIE DR
HALL LE
KRAVTCHINSKAIA E
KEAST V
AMARATUNGA GAJ
VEERASAMY VS
Citation: Ca. Davis et al., THE STRUCTURE OF BORON-DOPED, PHOSPHORUS-DOPED AND NITROGEN-DOPED TETRAHEDRAL AMORPHOUS-CARBON DEPOSITED BY CATHODIC ARC, Journal of non-crystalline solids, 170(1), 1994, pp. 46-50
Authors:
SILVA SRP
AMARATUNGA GAJ
SALJE EKH
KNOWLES KM
Citation: Srp. Silva et al., EVIDENCE OF HEXAGONAL DIAMOND IN PLASMA-DEPOSITED CARBON-FILMS, Journal of Materials Science, 29(19), 1994, pp. 4962-4966
Authors:
GOUD CB
AMARATUNGA GAJ
Citation: Cb. Goud et Gaj. Amaratunga, NEW CMOS COMPATIBLE JUNCTION-ISOLATED LATERAL BASE RESISTANCE CONTROLLED THYRISTOR, Electronics Letters, 30(3), 1994, pp. 271-273
Authors:
GOUD CB
AMARATUNGA GAJ
Citation: Cb. Goud et Gaj. Amaratunga, LATERAL HYBRID EMITTER SHORT MOS CONTROLLED THYRISTOR, Electronics Letters, 30(13), 1994, pp. 1095-1097
PHOTORESPONSE CHARACTERISTICS OF N-TYPE TETRAHEDRAL AMORPHOUS-CARBON P-TYPE SI HETEROJUNCTION DIODES
Authors:
VEERASAMY VS
AMARATUNGA GAJ
PARK JS
MILNE WI
MACKENZIE HS
MCKENZIE DR
Citation: Vs. Veerasamy et al., PHOTORESPONSE CHARACTERISTICS OF N-TYPE TETRAHEDRAL AMORPHOUS-CARBON P-TYPE SI HETEROJUNCTION DIODES, Applied physics letters, 64(17), 1994, pp. 2297-2299
Authors:
HUANG Q
AMARATUNGA GAJ
Citation: Q. Huang et Gaj. Amaratunga, CAPACITOR SWITCHED GATE-TURNOFF THYRISTOR, IEE proceedings. Part G. Circuits, devices and systems, 140(2), 1993, pp. 85-90
Authors:
CHAN KK
AMARATUNGA GAJ
SHAFI ZA
ASHBURN P
WONG SP
Citation: Kk. Chan et al., BIPOLAR-TRANSISTOR ACTION FROM AN AMORPHOUS CARBON SILICON HETEROJUNCTION EMITTER/, DIAMOND AND RELATED MATERIALS, 2(11), 1993, pp. 1445-1448
Authors:
FALLON PJ
VEERASAMY VS
DAVIS CA
ROBERTSON J
AMARATUNGA GAJ
MILNE WI
KOSKINEN J
Citation: Pj. Fallon et al., PROPERTIES OF FILTERED-ION-BEAM-DEPOSITED DIAMOND-LIKE CARBON AS A FUNCTION OF ION ENERGY, Physical review. B, Condensed matter, 48(7), 1993, pp. 4777-4782