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Results: 1-14 |
Results: 14
HRTEM STUDY OF STRAINED SI GE MULTILAYERS
Authors: ROMEO M UHLAQBOUILLET C DEVILLE JP WERCKMANN J EHRET G CHELLY R DENTEL D ANGOT T BISCHOFF JL
Citation: M. Romeo et al., HRTEM STUDY OF STRAINED SI GE MULTILAYERS, Thin solid films, 319(1-2), 1998, pp. 168-171
EPITAXY OF 2-DIMENSIONAL ERSIXGE2-X ON SI(111)(5X5)-GE OBSERVED BY LEED AND HREELS
Authors: ANGOT T LOUIS P GEWINNER G
Citation: T. Angot et al., EPITAXY OF 2-DIMENSIONAL ERSIXGE2-X ON SI(111)(5X5)-GE OBSERVED BY LEED AND HREELS, Surface science, 409(2), 1998, pp. 350-357
STABLE GE-H PHASE AT 620K ON SI1-XGEX SI(001) SURFACE - A HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY/
Authors: ANGOT T CHELLY R
Citation: T. Angot et R. Chelly, STABLE GE-H PHASE AT 620K ON SI1-XGEX SI(001) SURFACE - A HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY/, Surface science, 404(1-3), 1998, pp. 52-56
THE INFLUENCE OF HYDROGEN DURING THE GROWTH OF GE FILMS ON SI(001) BYSOLID SOURCE MOLECULAR-BEAM EPITAXY
Authors: DENTEL D BISCHOFF JL ANGOT T KUBLER L
Citation: D. Dentel et al., THE INFLUENCE OF HYDROGEN DURING THE GROWTH OF GE FILMS ON SI(001) BYSOLID SOURCE MOLECULAR-BEAM EPITAXY, Surface science, 404(1-3), 1998, pp. 211-214
IN-SITU MONITORING OF GROWTH-RATE PARAMETERS IN HOT-WIRE ASSISTED GASSOURCE-MOLECULAR BEAM EPITAXY USING A QUARTZ MICROBALANCE
Authors: CHELLY R ANGOT T LOUIS P BOLMONT D KOULMANN JJ
Citation: R. Chelly et al., IN-SITU MONITORING OF GROWTH-RATE PARAMETERS IN HOT-WIRE ASSISTED GASSOURCE-MOLECULAR BEAM EPITAXY USING A QUARTZ MICROBALANCE, Applied surface science, 115(3), 1997, pp. 299-306
GROWTH OF EPITAXIAL SIGE NANOSTRUCTURES AT LOW-TEMPERATURE ON SI(100)USING HOT-WIRE ASSISTED GAS-SOURCE MOLECULAR-BEAM EPITAXY
Authors: CHELLY R WERCKMANN J ANGOT T LOUIS P BOLMONT D KOULMANN JJ
Citation: R. Chelly et al., GROWTH OF EPITAXIAL SIGE NANOSTRUCTURES AT LOW-TEMPERATURE ON SI(100)USING HOT-WIRE ASSISTED GAS-SOURCE MOLECULAR-BEAM EPITAXY, Thin solid films, 294(1-2), 1997, pp. 84-87
ORIGIN OF THE SEMIMETAL-TO-SEMICONDUCTOR TRANSITION OBSERVED IN 2-DIMENSIONAL ER SILICIDE UPON H EXPOSURE - EVIDENCE OF 2 CHEMISORPTION SITES
Authors: WETZEL P ANGOT T PIRRI C GEWINNER G
Citation: P. Wetzel et al., ORIGIN OF THE SEMIMETAL-TO-SEMICONDUCTOR TRANSITION OBSERVED IN 2-DIMENSIONAL ER SILICIDE UPON H EXPOSURE - EVIDENCE OF 2 CHEMISORPTION SITES, Surface science, 383(2-3), 1997, pp. 340-349
HYDROGEN-INDUCED SEMIMETAL-SEMICONDUCTOR TRANSITION OF 2-DIMENSIONAL ERSI2 DETECTED BY ELECTRON-ENERGY-LOSS SPECTROSCOPY
Authors: ANGOT T KOULMANN JJ GEWINNER G
Citation: T. Angot et al., HYDROGEN-INDUCED SEMIMETAL-SEMICONDUCTOR TRANSITION OF 2-DIMENSIONAL ERSI2 DETECTED BY ELECTRON-ENERGY-LOSS SPECTROSCOPY, Europhysics letters, 35(3), 1996, pp. 215-220
FREQUENCY-SHIFT OF THE SI-H VIBRATIONAL-MODES ON ERBIUM SILICIDE MEASURED BY HREELS
Authors: ANGOT T KOULMANN JJ BOLMONT D GEWINNER G
Citation: T. Angot et al., FREQUENCY-SHIFT OF THE SI-H VIBRATIONAL-MODES ON ERBIUM SILICIDE MEASURED BY HREELS, Surface science, 368, 1996, pp. 190-195
HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY OF THE SI(001)3X1 HYDROGENATED SURFACE
Authors: ANGOT T BOLMONT D KOULMANN JJ
Citation: T. Angot et al., HIGH-RESOLUTION ELECTRON-ENERGY-LOSS SPECTROSCOPY STUDY OF THE SI(001)3X1 HYDROGENATED SURFACE, Surface science, 352, 1996, pp. 401-406
GROWTH OF EPITAXIAL SI1-XGEX LAYERS ON SI(001) SURFACE, BY CATALYTICAL DECOMPOSITION OF DISILANE AND GERMANE - PHOTOEMISSION-STUDIES
Authors: CHELLY R ANGOT T BOLMONT D KOULMANN JJ
Citation: R. Chelly et al., GROWTH OF EPITAXIAL SI1-XGEX LAYERS ON SI(001) SURFACE, BY CATALYTICAL DECOMPOSITION OF DISILANE AND GERMANE - PHOTOEMISSION-STUDIES, Applied physics letters, 67(12), 1995, pp. 1733-1735
ELECTRONIC-STRUCTURE OF THE PROTOTYPICAL AS-SI(111)-1X1 SURFACE INVESTIGATED BY INVERSE-PHOTOEMISSION SPECTROSCOPY
Authors: BOUZIDI S ANGOT T COLETTI F DEBEVER JM GUYAUX JL THIRY PA
Citation: S. Bouzidi et al., ELECTRONIC-STRUCTURE OF THE PROTOTYPICAL AS-SI(111)-1X1 SURFACE INVESTIGATED BY INVERSE-PHOTOEMISSION SPECTROSCOPY, Physical review. B, Condensed matter, 49(23), 1994, pp. 16539-16543
INVERSE-PHOTOEMISSION SPECTROSCOPY OF ELECTRON-IRRADIATED EPITAXIAL CAF2 ON SI(111)
Authors: BOUZIDI S ANGOT T LANGLAIS V DEBEVER JM SPORKEN R LONGUEVILLE JL THIRY PA
Citation: S. Bouzidi et al., INVERSE-PHOTOEMISSION SPECTROSCOPY OF ELECTRON-IRRADIATED EPITAXIAL CAF2 ON SI(111), Surface science, 309, 1994, pp. 1038-1044
STRUCTURAL PERFECTION IN PHYSISORBED FILMS - A SYNCHROTRON X-RAY-DIFFRACTION STUDY OF XENON ADSORBED ON THE AG(111) SURFACE
Authors: DAI P ANGOT T EHRLICH SN WANG SK TAUB H
Citation: P. Dai et al., STRUCTURAL PERFECTION IN PHYSISORBED FILMS - A SYNCHROTRON X-RAY-DIFFRACTION STUDY OF XENON ADSORBED ON THE AG(111) SURFACE, Physical review letters, 72(5), 1994, pp. 685-688
Risultati: 1-14 |