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Results: 1-10 |
Results: 10
TEMPERATURE-DEPENDENCE OF SIGE HBT STATIC AND DYNAMIC CHARACTERISTICS
Authors: ANIEL F ZEROUNIAN N GRUHLE A MAHNER C VERNET G ADDE R
Citation: F. Aniel et al., TEMPERATURE-DEPENDENCE OF SIGE HBT STATIC AND DYNAMIC CHARACTERISTICS, Journal de physique. IV, 8(P3), 1998, pp. 81-86
4 NOISE PARAMETER DETERMINATION METHOD FOR TRANSISTORS BASED ON THE FREQUENCY-DEPENDENCE OF THE NOISE-FIGURE
Authors: DANELON V CROZAT P ANIEL F VERNET G
Citation: V. Danelon et al., 4 NOISE PARAMETER DETERMINATION METHOD FOR TRANSISTORS BASED ON THE FREQUENCY-DEPENDENCE OF THE NOISE-FIGURE, Electronics Letters, 34(16), 1998, pp. 1612-1613
ENHANCEMENTS AND DEGRADATIONS IN ULTRASHORT GATE GAAS AND INP HEMTS PROPERTIES AT CRYOGENIC TEMPERATURES - AN OVERVIEW
Authors: ANIEL F SYLVESTRE A JIN Y CROZAT P DELUSTRAC A ADDE R
Citation: F. Aniel et al., ENHANCEMENTS AND DEGRADATIONS IN ULTRASHORT GATE GAAS AND INP HEMTS PROPERTIES AT CRYOGENIC TEMPERATURES - AN OVERVIEW, Journal de physique. IV, 6(C3), 1996, pp. 145-149
LOW-TEMPERATURE ELECTROLUMINESCENCE SPECTROSCOPY OF HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP
Authors: SYLVESTRE A ANIEL F BOUCAUD P JULIEN FH CROZAT P DELUSTRAC A ADDE R JIN Y PRASEUTH JP
Citation: A. Sylvestre et al., LOW-TEMPERATURE ELECTROLUMINESCENCE SPECTROSCOPY OF HIGH-ELECTRON-MOBILITY TRANSISTORS ON INP, Journal of applied physics, 80(1), 1996, pp. 464-469
NONISOTHERMAL QUASI-BIDIMENSIONAL ENERGY-BALANCE MODEL
Authors: LEPAUL S ANIEL F PEYMAYECHE L DELUSTRAC A BOUILLAULT F ADDE R
Citation: S. Lepaul et al., NONISOTHERMAL QUASI-BIDIMENSIONAL ENERGY-BALANCE MODEL, Electronics Letters, 32(7), 1996, pp. 692-694
DIDACTIC PACKAGE FOR GAAS MMIC DESIGN AND CHARACTERIZATION
Authors: VERNET G ANIEL F CROZAT P HENAUX JC MEGHERBI S RAYNAUD G SYLVESTRE A
Citation: G. Vernet et al., DIDACTIC PACKAGE FOR GAAS MMIC DESIGN AND CHARACTERIZATION, Onde electrique, 75(1), 1995, pp. 34-37
ELECTROLUMINESCENCE SPECTROSCOPY OF ALGAAS INGAAS AND ALGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/
Authors: ANIEL F BOUCAUD P SYLVESTRE A CROZAT P JULIEN FH ADDE R JIN Y
Citation: F. Aniel et al., ELECTROLUMINESCENCE SPECTROSCOPY OF ALGAAS INGAAS AND ALGAAS/GAAS HIGH-ELECTRON-MOBILITY TRANSISTORS/, Journal of applied physics, 77(5), 1995, pp. 2184-2189
HIGH-ELECTRIC-FIELD TRANSPORT EFFECTS ON LOW-TEMPERATURE OPERATION OFPSEUDOMORPHIC HEMTS
Authors: ANIEL F CROZAT P DELUSTRAC A ADDE R JIN Y
Citation: F. Aniel et al., HIGH-ELECTRIC-FIELD TRANSPORT EFFECTS ON LOW-TEMPERATURE OPERATION OFPSEUDOMORPHIC HEMTS, Journal de physique. IV, 4(C6), 1994, pp. 171-176
SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/
Authors: VANHOVE M ZOU G DERAEDT W JANSEN P JONCKHEERE R VANROSSUM M HOOLE ACF ALLEE DR BROERS AN CROZAT P JIN Y ANIEL F ADDE R
Citation: M. Vanhove et al., SCALING BEHAVIOR OF DELTA-DOPED ALGAAS INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH GATELENGTHS DOWN TO 60 NM AND SOURCE-DRAIN GAPS DOWN TO 230 NM/, Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena, 11(4), 1993, pp. 1203-1208
GATE LENGTH ELECTRIC PARAMETER DEPENDENCES OF ULTRA-SUBMICROMETER DELTA-DOPED PSEUDOMORPHIC HEMTS
Authors: ANIEL F JINDELORME Y CROZAT P DELUSTRAC A ADDE R VANHOVE M DERAEDT W VANROSSUM M JIN Y LAUNOIS H
Citation: F. Aniel et al., GATE LENGTH ELECTRIC PARAMETER DEPENDENCES OF ULTRA-SUBMICROMETER DELTA-DOPED PSEUDOMORPHIC HEMTS, Electronics Letters, 29(17), 1993, pp. 1570-1571
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